公开(公告)号：US20230245886A1

公开(公告)日：2023-08-03

申请号：US18004278

申请日：2021-06-14

申请人： SONY GROUP CORPORATION

发明人： SYUUITI TAKIZAWA ,  MICHINORI SHIOMI ,  YOSUKE SAITO ,  MAMORU TANABE ,  SHUNSUKE YAMASHITA

IPC分类号： H01L21/02 ,  H01L27/146

CPC分类号： H01L21/02601 ,  H01L27/146 ,  B82Y30/00

摘要： An imaging device including a photoelectric conversion layer including a semiconductor nanoparticle (100) including a particle body (101) and a monoatomic ligand (102). The particle body (101) includes a semiconductor core (103) including at least two or more elements selected from a Group I element, a Group III element, a Group V element, and a Group VI element. The monoatomic ligand (102) is bonded to a surface of the particle body (101).

公开(公告)号：US20240146031A1

公开(公告)日：2024-05-02

申请号：US18548161

申请日：2022-01-21

申请人： SONY GROUP CORPORATION

发明人： MICHINORI SHIOMI ,  MASAYUKI TANAKA ,  TOMOMASA WATANABE ,  MIKIHIRO YOKOZEKI

IPC分类号： H01S5/30 ,  H01S5/183

CPC分类号： H01S5/3095 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/3013

摘要： The present technology provides a surface emitting laser capable of performing current confinement at least in a tunnel junction layer while suppressing the characteristic change of the tunnel junction layer.
The surface emitting laser according to the present technology includes: first and second reflectors; and a resonator disposed between the first and second reflectors, the resonator including an active layer and a tunnel junction layer, in which, in the resonator, a peripheral portion has higher resistance than a central portion at least in an entire region in a thickness direction of the tunnel junction layer. According to the surface emitting laser according to the present technology, it is possible to provide a surface emitting laser capable of performing current confinement at least in a tunnel junction layer while suppressing the characteristic change of the tunnel junction layer.

公开(公告)号：US20230165020A1

公开(公告)日：2023-05-25

申请号：US18156712

申请日：2023-01-19

申请人： SONY GROUP CORPORATION

发明人： MASASHI BANDO ,  MICHINORI SHIOMI

IPC分类号： H10K39/32 ,  H10K30/35 ,  H10K30/82 ,  H10K30/87

CPC分类号： H10K39/32 ,  H10K30/35 ,  H10K30/82 ,  H10K30/87

摘要： A photoelectric conversion element includes a first electrode including a plurality of electrodes independent from each other, a second electrode disposed to be opposed to the first electrode, an n-type photoelectric conversion layer including a semiconductor nanoparticle, and a semiconductor layer including an oxide semiconductor material. The semiconductor layer is provided between the first electrode and the n-type photoelectric conversion layer. The n-type photoelectric conversion layer is provided between the first electrode and the second electrode. A carrier density of the n-type photoelectric conversion layer is higher than a carrier density of the semiconductor layer.