公开(公告)号：US12126142B2

公开(公告)日：2024-10-22

申请号：US17292975

申请日：2019-10-25

申请人： SONY GROUP CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Takashi Tange ,  Kunihiko Tasai ,  Kota Tokuda

IPC分类号： H01S5/343 ,  H01S5/042 ,  H01S5/22

CPC分类号： H01S5/34333 ,  H01S5/04252 ,  H01S5/22

摘要： A nitride semiconductor laser device of one embodiment of the present disclosure includes a single-crystal substrate, a base layer, a sheet-shaped structure, a light emitting layer, and a resonator mirror. The single-crystal substrate extends in one direction. The base layer is provided on the single-crystal substrate and includes a nitride semiconductor. The sheet-shaped structure is provided on the base layer to stand in a direction perpendicular to the base layer. The sheet-shaped structure has an area of a side surface that is greater than an area of an upper surface. The side surface extends in a longitudinal direction of the single-crystal substrate. The sheet-shaped structure includes a nitride semiconductor. The light emitting layer is provided at least on the side surface of the sheet-shaped structure. The light emitting layer includes a nitride semiconductor. The resonator mirror is provided by a pair of end surfaces of the sheet-shaped structure that oppose each other in the longitudinal direction.

公开(公告)号：US11271368B2

公开(公告)日：2022-03-08

申请号：US16960710

申请日：2019-01-17

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Kota Tokuda ,  Hideki Watanabe ,  Takayuki Kawasumi

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/042 ,  H01S5/22 ,  H01S5/32 ,  H01S5/30 ,  H01S5/40 ,  H01S5/343

摘要： A semiconductor laser according to one embodiment of the present disclosure includes a semiconductor stack. The semiconductor stack includes, in the following order, a first cladding layer, an active layer, one or a plurality of low-concentration impurity layers, a contact layer, and a second cladding layer that includes a transparent conductive material. The semiconductor stack further has, in a portion including the contact layer, a ridge extending in a stacked in-plane direction. Each low-concentration impurity layer has an impurity concentration of 5.0×1017 cm−3 or less, and a total thickness of the low-concentration impurity layer is 250 nm or more and 1000 nm or less. A distance between the second cladding layer and the low-concentration impurity layer closest to the second cladding layer is 150 nm or less.

公开(公告)号：US11923661B2

公开(公告)日：2024-03-05

申请号：US17260876

申请日：2019-06-14

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Takayuki Kawasumi ,  Hideki Kimura ,  Kota Tokuda ,  Yoshiaki Watanabe

IPC分类号： H01S5/183 ,  H01S5/227

CPC分类号： H01S5/18311 ,  H01S5/18344 ,  H01S5/18377 ,  H01S5/2275

摘要： A method of manufacturing a surface emitting laser according to an embodiment of the present disclosure includes the following two steps:



(1) a step of forming a semiconductor stacked structure on a substrate, the semiconductor stacked structure including an active layer, a first DBR layer of a first electrical conduction type, and a second DBR layer of a second electrical conduction type, the first DBR layer and the second DBR layer sandwiching the active layer, the second electrical conduction type being different from the first electrical conduction type; and
(2) a step of forming a mesa section at a portion on the second DBR layer side in the semiconductor stacked structure and then forming an annular diffusion region of the first electrical conduction type at an outer edge of the mesa section by impurity diffusion from a side surface of the mesa section, the mesa section including the second DBR layer, the mesa section not including the active layer.