公开(公告)号：US20240235162A9

公开(公告)日：2024-07-11

申请号：US18132414

申请日：2023-04-09

Applicant: Shenzhen Berxel Photonics Co., Ltd.

Inventor： Jiaxing WANG ,  Sui ZHANG

IPC: H01S5/183

CPC classification number: H01S5/18377 ,  H01S5/18311

Abstract: Provided are a vertical cavity surface emitting laser and a manufacturing method thereof, the vertical cavity surface emitting laser comprises a laser precursor, and the laser precursor comprises a first reflector layer, an oxidation layer, a light-emitting layer and a second reflector layer which are stacked, wherein the second reflector layer comprises a plurality of first reflection layers and a plurality of second reflection layers, and a groove is formed on the side of the second reflection layer from the oxidation groove and in a direction away from the oxidation groove; a protection layer is arranged on the laser precursor, and the protection layer at least covers the inner wall of the oxidation groove, and the groove is filled with a part of the protection layer. The technical solution may avoid the collapse of the edge of the first reflection layer.

公开(公告)号：US20240146028A1

公开(公告)日：2024-05-02

申请号：US18049828

申请日：2022-10-26

Applicant: Well & Fortune Tech. LLC

Inventor： CHAO-CHIEH CHU

IPC: H01S5/183

CPC classification number: H01S5/18372 ,  H01S5/18375 ,  H01S5/18377

Abstract: A method for manufacturing a distributed Bragg reflector is provided. The distributed Bragg reflector is applied to a 1550 nm vertical-cavity surface-emitting laser, which structurally includes a top distributed Bragg reflector, a bottom distributed Bragg reflector, and a vertical cavity (including a P-type and an N-type electrode) and a multiple quantum well light-emitting layer that are positioned therebetween. An optical multilayer film of the distributed Bragg reflector is formed by sputtering, and includes silicon layers and silicon dioxide layers alternately stacked to each other. The silicon dioxide layers are produced by a process of nano-sputtering and micro-plasma oxidation. A reflectance of the bottom distributed Bragg reflector at 1,550 nm is greater than 99.9%, and a reflectance of the top distributed Bragg reflector at 1,550 nm is controlled to be between 95% and 99%, so that basic physical/optical requirements for forming a resonant laser can be improved.

公开(公告)号：US20240136795A1

公开(公告)日：2024-04-25

申请号：US18211710

申请日：2023-06-19

Applicant: Mellanox Technologies, Ltd.

Inventor： Yuri Berk ,  Vladimir lakovlev ,  Tamir Sharkaz ,  Elad Mentovich

IPC: H01S5/183 ,  H01S5/227 ,  H01S5/30 ,  H01S5/34 ,  H01S5/42

CPC classification number: H01S5/18347 ,  H01S5/18311 ,  H01S5/18377 ,  H01S5/2275 ,  H01S5/3095 ,  H01S5/3401 ,  H01S5/423

Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided that includes a mesa structure disposed on a substrate. The mesa structure defines an emission axis of the VCSEL. The mesa structure includes a first reflector, a second reflector, and a cascaded active region structure disposed between the first reflector and the second reflector. The cascaded active region structure includes a plurality of cascaded active region layers disposed along the emission axis, where each of the cascade active region layers includes an active region having multi-quantum well and/or dots layers (MQLs), a tunnel junction aligned with the emission axis, and an oxide confinement layer. The oxide confinement layer is disposed between the tunnel junction and MQLs, and has an electrical current aperture defined therein. The mesa structure defines an optical window through which the VCSEL is configured to emit light.

公开(公告)号：US11916355B2

公开(公告)日：2024-02-27

申请号：US16957856

申请日：2018-12-26

Applicant: Princeton Optronics, Inc.

Inventor： Jean-Francois Seurin ,  Robert Van Leeuwen ,  Chuni Ghosh

IPC: H01S5/183

CPC classification number: H01S5/18369 ,  H01S5/18313 ,  H01S5/18377 ,  H01S2301/163

Abstract: Narrow beam divergence semiconductor sources are operable to generate a beam having a substantially narrow beam divergence, an emission wavelength, and a substantially uniform beam intensity. The presence of an extended length mirror can help suppress one or more longitudinal and/or transverse modes such that the beam divergence and/or the spectral width of emission is substantially reduced.

公开(公告)号：US20240047947A1

公开(公告)日：2024-02-08

申请号：US18468135

申请日：2023-09-15

Applicant: Lumentum Operations LLC

Inventor： Albert YUEN ,  Ajit Vijay BARVE

IPC: H01S5/42 ,  H01S5/042 ,  H01S5/028 ,  H01S5/183

CPC classification number: H01S5/423 ,  H01S5/0425 ,  H01S5/028 ,  H01S5/04254 ,  H01S5/18311 ,  H01S5/04256 ,  H01S5/0282 ,  H01S2301/176 ,  H01S5/18305 ,  H01S5/18377

Abstract: An emitter array may comprise a plurality of emitters that includes two adjacent emitters. The emitter array may comprise a plurality of emitters that includes two adjacent emitters. The ohmic metal layer may include a portion that is shared by, and located between, the two adjacent emitters. The emitter array may comprise a protective layer over the ohmic metal layer. The emitter array may comprise a via through the protective layer to the portion. The via is shared by, and located between, the two adjacent emitters.

公开(公告)号：US20230261441A1

公开(公告)日：2023-08-17

申请号：US17656303

申请日：2022-03-24

Applicant: Lumentum Operations LLC

Inventor： Yeyu ZHU ,  Chien-Yao LU

IPC: H01S5/183 ,  H01S5/20

CPC classification number: H01S5/18311 ,  H01S5/18377 ,  H01S5/18394 ,  H01S5/2086

Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a set of epitaxial layers disposed on the substrate layer. The set of epitaxial layers may include a first mirror and a second mirror. At least one of the first mirror or the second mirror may include at least one reflector pair that includes a semiconductor material layer and an oxidized semiconductor material layer. The set of epitaxial layers may include an oxidation trench axially extending into at least the second mirror, an active region between the first mirror and the second mirror, and an oxidation layer with an oxidation aperture.

公开(公告)号：US20190140424A1

公开(公告)日：2019-05-09

申请号：US16239657

申请日：2019-01-04

Applicant: International Business Machines Corporation

Inventor： Cheng-Wei Cheng ,  Effendi Leobandung ,  Ning Li ,  Devendra K. Sadana ,  Kuen-Ting Shiu

IPC: H01S5/183 ,  H01L31/18 ,  H01S5/02 ,  H01L31/0232 ,  H01L31/0304 ,  H01L33/30 ,  H01L33/12 ,  H01L33/10 ,  H01L33/00 ,  H01L31/105 ,  H01S5/187 ,  H01S5/343 ,  H01L33/02

CPC classification number: H01S5/18377 ,  H01L31/02327 ,  H01L31/0304 ,  H01L31/105 ,  H01L31/1852 ,  H01L33/0012 ,  H01L33/0066 ,  H01L33/025 ,  H01L33/105 ,  H01L33/12 ,  H01L33/30 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/0262 ,  H01S5/18361 ,  H01S5/187 ,  H01S5/3432 ,  H01S5/34366

Abstract: A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1-y), where 0.8

公开(公告)号：US20190013435A1

公开(公告)日：2019-01-10

申请号：US16115942

申请日：2018-08-29

Applicant: Silanna UV Technologies Pte Ltd

Inventor： Petar Atanackovic

IPC: H01L33/10 ,  H01S5/183 ,  H01L33/06 ,  H01S5/187 ,  H01L33/00

CPC classification number: H01L33/105 ,  H01L33/0012 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46 ,  H01L2933/0025 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18355 ,  H01S5/18358 ,  H01S5/18372 ,  H01S5/18375 ,  H01S5/18377 ,  H01S5/187 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2301/173

Abstract: Resonant optical cavity light emitting devices are disclosed, where the device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector may have a metal composition comprising elemental aluminum or may be a distributed Bragg reflector. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K·λ/n. K is a constant ranging from 0.25 to less than 1, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.

公开(公告)号：US09843162B2

公开(公告)日：2017-12-12

申请号：US14895120

申请日：2014-06-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jelena Ristic ,  Martin Straβburg ,  Alfred Lell ,  Uwe Strauβ

IPC: H01S5/00 ,  H01S5/34 ,  H01L33/24 ,  H01S5/022 ,  H01S5/343 ,  H01L33/00 ,  H01L33/16 ,  H01L33/40 ,  H01S5/02 ,  H01S5/10 ,  H01S5/183 ,  H01S5/40 ,  H01S5/42 ,  H01L27/15 ,  H01L33/10 ,  H01L33/46

CPC classification number: H01S5/3428 ,  H01L27/156 ,  H01L33/007 ,  H01L33/10 ,  H01L33/16 ,  H01L33/24 ,  H01L33/405 ,  H01L33/46 ,  H01S5/0207 ,  H01S5/0217 ,  H01S5/02236 ,  H01S5/1042 ,  H01S5/1835 ,  H01S5/18377 ,  H01S5/341 ,  H01S5/34333 ,  H01S5/4025 ,  H01S5/4087 ,  H01S5/423

Abstract: An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer.

公开(公告)号：US20170271851A1

公开(公告)日：2017-09-21

申请号：US15442160

申请日：2017-02-24

Applicant: Katsunari HANAOKA

Inventor： Katsunari HANAOKA

IPC: H01S5/42 ,  H01S5/187 ,  H01S5/183

CPC classification number: H01S5/423 ,  H01S5/0201 ,  H01S5/183 ,  H01S5/18377 ,  H01S5/187 ,  H01S2301/173

Abstract: A surface-emitting laser array and a laser device including the surface-emitting laser array. The surface-emitting laser array includes a layered product including a lower reflecting mirror having two layers with different refractive indexes, an upper reflecting mirror, and an active layer disposed between the lower reflecting mirror and the upper reflecting mirror, a first separation trench from which the upper reflecting mirror, the active layer, and the lower reflecting mirror are removed, the first separation trench separating the surface-emitting laser array from an adjacent chip, and a second separation trench disposed between the first separation trench and a light-emitting unit that emits a laser beam, the second separation trench having a prescribed depth.