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    Signal processing device and method, imaging element, and electronic device
    1.
    发明授权
    Signal processing device and method, imaging element, and electronic device 有权

    公开(公告)号：US10326953B2

    公开(公告)日：2019-06-18

    申请号：US15514890

    申请日：2015-09-25

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Mamoru Sato ,  Yusuke Oike

    IPC分类号： H04N5/363 ,  H04N5/3745 ,  H03M1/12 ,  H04N5/357 ,  H04N5/378 ,  H03M1/56 ,  H01L27/146

    摘要： The present technology relates to signal processing device and method, an imaging element, and an electronic device capable of reducing a rise of costs. A signal processing device according to the present technology includes a measurement unit that performs measurement of a length of a period from an input start of a signal to a change of a value of the signal a plurality of times, retains measured values obtained by the measurement performed the plurality of times, sets an initial value of the measurement on the basis of any one of a plurality of the retained measured values, and performs the measurement by using the initial value. The present technology is applicable to an electronic circuit such as a flip-flop circuit and an A/D conversion unit, an imaging element such as a CMOS image sensor, and an electronic device such as a digital still camera, for example.

    SIGNAL PROCESSING DEVICE AND SOLID-STATE IMAGING DEVICE
    3.
    发明申请
    SIGNAL PROCESSING DEVICE AND SOLID-STATE IMAGING DEVICE 有权

    公开(公告)号：US20230031389A1

    公开(公告)日：2023-02-02

    申请号：US17958702

    申请日：2022-10-03

    申请人： Sony Semiconductor Solutions Corporation

    发明人： Yusuke Oike ,  Mamoru Sato ,  Yukio Tagawa

    IPC分类号： H04N5/363 ,  H04N5/3745 ,  H04N5/378

    摘要： There is provided an imaging device, comprising differential amplifier circuitry comprising a first amplification transistor and a second amplification transistor; and a plurality of pixels including a first pixel and a second pixel, wherein the first pixel includes a first photoelectric converter, a first reset transistor, and the first amplification transistor, and wherein the second pixel includes a second photoelectric converter, a second reset transistor, and the second amplification transistor, wherein the first reset transistor is coupled to a first reset voltage, and wherein the second reset transistor is coupled to a second reset voltage different than the first reset voltage.

    SOLID-STATE IMAGING DEVICE
    8.
    发明申请
    SOLID-STATE IMAGING DEVICE 有权

    公开(公告)号：US20230041457A1

    公开(公告)日：2023-02-09

    申请号：US17971981

    申请日：2022-10-24

    申请人： Sony Semiconductor Solutions Corporation

    发明人： Mamoru Sato ,  Akihiko Kato ,  Yusuke Oike

    IPC分类号： H04N5/365 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/369 ,  H04N5/361

    摘要： To improve the image quality of image data in a solid-state imaging device that reads a signal according to a potential difference between respective floating diffusion regions of a pair of pixels.
    A pixel unit is provided with a plurality of rows each including a plurality of pixels. A readout row selection unit selects any of the plurality of rows as a readout row every time a predetermined period elapses, and causes each of the plurality of pixels in the readout row to generate a signal potential according to a received light amount. A reference row selection unit selects a row different from a previous row from among the plurality of rows as a current reference row every time the predetermined period elapses, and causes each of the plurality of pixels in the reference row to generate a predetermined reference potential. A readout circuit unit reads a voltage signal according to a difference between the signal potential and the reference potential.

    LIGHT-RECEIVING APPARATUS
    9.
    发明申请
    LIGHT-RECEIVING APPARATUS 有权

    公开(公告)号：US20220155153A1

    公开(公告)日：2022-05-19

    申请号：US17428408

    申请日：2020-03-06

    申请人： Sony Semiconductor Solutions Corporation

    发明人： Hongbo Zhu ,  Kazuki Hizu ,  Takafumi Takatsuka ,  Yusuke Oike ,  Jun Ogi ,  Yoshiaki Tashiro

    IPC分类号： G01J11/00 ,  G01J1/44 ,  H03K23/58

    摘要： A light-receiving apparatus (1a) includes a counting unit (11), a setting unit (12), and an acquiring unit (13). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.

    Imaging device
    10.
    发明授权
    Imaging device 有权

    公开(公告)号：US10777597B2

    公开(公告)日：2020-09-15

    申请号：US16301877

    申请日：2018-03-20

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Jun Ogi ,  Yoshiaki Tashiro ,  Takahiro Toyoshima ,  Yorito Sakano ,  Yusuke Oike ,  Hongbo Zhu ,  Keiichi Nakazawa ,  Yukari Takeya ,  Atsushi Okuyama ,  Yasufumi Miyoshi ,  Ryosuke Matsumoto ,  Atsushi Horiuchi

    IPC分类号： H01L27/146 ,  H04N5/369 ,  H01L31/107

    摘要： To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.