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公开(公告)号：US11039099B2
公开(公告)日：2021-06-15
申请号：US16342820
申请日：2017-10-10
发明人： Masaki Sakakibara , Yorito Sakano , Satoko Iida
IPC分类号： H04N5/353 , H04N5/378 , H04N5/369 , H04N5/355 , H04N5/3745 , H04N5/374 , H04N5/363 , H04N5/365
摘要： An increase in memory capacity is suppressed in a solid-state imaging element that performs correlated double sampling processing. A pixel circuit sequentially generates each of a predetermined reset level and a plurality of signal levels corresponding to the exposure amount. An analog-to-digital converter converts a predetermined reset level into digital data and outputs the data as reset data, converts each of the plurality of pieces of signal data into digital data, and outputs the data as signal data. An arithmetic circuit holds a difference between the reset data and the signal data output first, as held data in a memory, and then adds the held data and the signal data output second and subsequent times together and causes the memory to hold the added data as new held data.
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公开(公告)号：US10917591B2
公开(公告)日：2021-02-09
申请号：US16490182
申请日：2018-03-30
发明人： Satoko Iida , Masaki Sakakibara , Yorito Sakano , Naosuke Asari , Masaaki Takizawa , Tomohiko Asatsuma , Shogo Furuya
摘要： The present disclosure relates to a solid-state imaging device and a method of controlling a solid-state imaging device, and an electronic device for enabling appropriate expansion of a dynamic range with respect to an object moving at a high speed or an object having a large luminance difference between bright and dark to reduce motion distortion (motion artifact). Exposure of a plurality of pixels is individually controlled in units of pixels. The present disclosure can be applied to a solid-state imaging device.
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公开(公告)号：US09721981B2
公开(公告)日：2017-08-01
申请号：US14906616
申请日：2014-07-17
发明人： Yorito Sakano
IPC分类号： H01L27/146 , H04N5/355 , H04N5/3745
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14607 , H01L27/1461 , H01L27/14612 , H01L27/14636 , H04N5/3559 , H04N5/37452
摘要： A pixel circuit includes a floating diffusion layer of a first conductivity-type between a drain/source of a second conductivity-type and a source/drain of the second conductivity-type. The source/drain and the drain/source touch the floating diffusion layer. A cathode of a photoelectric converter is electrically connected to the floating diffusion layer. An anode of the photoelectric converter touches the cathode. The cathode is of the first conductivity-type and the anode is of the second conductivity-type.
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公开(公告)号：US11424281B2
公开(公告)日：2022-08-23
申请号：US16987745
申请日：2020-08-07
发明人： Jun Ogi , Yoshiaki Tashiro , Takahiro Toyoshima , Yorito Sakano , Yusuke Oike , Hongbo Zhu , Keiichi Nakazawa , Yukari Takeya , Atsushi Okuyama , Yasufumi Miyoshi , Ryosuke Matsumoto , Atsushi Horiuchi
IPC分类号： H01L31/00 , H01L27/146 , H04N5/369 , H01L31/107
摘要： To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.
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公开(公告)号：US10757350B2
公开(公告)日：2020-08-25
申请号：US15745385
申请日：2016-07-15
发明人： Yoshiaki Tashiro , Yorito Sakano
摘要： A solid-state image pickup device and an electronic apparatus that enable the performance of a logarithmic sensor in a solar-cell mode to improve. After Signal (S) is read, a P-phase signal (N) is read in a conducted state in which RST is ON, and a P-phase signal (N′) is read in a non-conducted state in which the RST is OFF. Thus, in a case where sufficient incident light illuminance is provided (Bright), S-N being the difference with respect to the P phase acquired in the conducted state in which the RST is ON, is selected and output. In a case where capacitance is insufficiently charged in a low-illuminance condition in which the incident light is less in amount (Dark), S-N′ being the difference with respect to the P phase acquired in the conducted state in which the RST is OFF, is selected and output.
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公开(公告)号：US10412329B2
公开(公告)日：2019-09-10
申请号：US15529195
申请日：2015-11-27
发明人： Yorito Sakano , Tsutomu Imoto , Hideo Nomura , Yoshiaki Tashiro , Toshiyuki Nishihara , Muriel Cohen , Frederick Brady
IPC分类号： H04N3/14 , H04N5/335 , H04N5/359 , H01L27/146 , H04N5/357 , H04N5/3745 , H04N5/378
摘要： An imaging apparatus with logarithmic characteristics includes: a photodiode that receives light; a well tap unit that fixes the potential of an N-type region of the photodiode; and a resetting unit that resets the photodiode, a P-type region of the photodiode outputting a voltage signal equivalent to a photocurrent subjected to logarithmic compression. The first potential to be supplied to the well tap unit is made lower than the second potential to be supplied to the resetting unit, so that the capacitance formed with the PN junction of the photodiode is charged when the resetting unit performs a reset operation. The present technology can be applied to unit pixels having logarithmic characteristics.
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公开(公告)号：US11122230B2
公开(公告)日：2021-09-14
申请号：US16755397
申请日：2018-10-02
发明人： Ryosuke Nakamura , Yorito Sakano , Atsushi Suzuki
IPC分类号： H04N5/3745 , H04N5/355 , H04N5/378
摘要： An imaging apparatus of the present disclosure includes: a first switch that couples a first light-receiving device and a first charge accumulation section to each other; a second switch that couples a predetermined node and the first charge accumulation section to each other; a third switch that applies a predetermined voltage to the predetermined node; a fourth switch that couples a second light-receiving device and a second charge accumulation section to each other; a fifth switch that couples the second charge accumulation section and the predetermined node to each other; an output section that outputs a pixel voltage; a driving section; and a processor that determines first to fourth values. The driving section turns on the second and third switches and turning off the first, fourth, and fifth switches to the off state in a first period, turns off the third switch and turns on the fifth switch in a second period, turns on the fourth switch in a third period, and turns off the fourth switch in a fourth period. The processor determines the third value on the basis of the pixel voltages in the second and fourth periods.
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公开(公告)号：US10777602B2
公开(公告)日：2020-09-15
申请号：US16410947
申请日：2019-05-13
发明人： Yorito Sakano
IPC分类号： H01L27/146 , H04N5/355 , H04N5/3745
摘要： A pixel circuit includes a floating diffusion layer of a first conductivity-type between a drain/source of a second conductivity-type and a source/drain of the second conductivity-type. The source/drain and the drain/source touch the floating diffusion layer. A cathode of a photoelectric converter is electrically connected to the floating diffusion layer. An anode of the photoelectric converter touches the cathode. The cathode is of the first conductivity-type and the anode is of the second conductivity-type.
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公开(公告)号：US09661194B2
公开(公告)日：2017-05-23
申请号：US14492335
申请日：2014-09-22
发明人： Yorito Sakano , Takashi Abe , Keiji Mabuchi , Ryoji Suzuki , Hiroyuki Mori , Yoshiharu Kudoh , Fumihiko Koga , Takeshi Yanagita , Kazunobu Ota
IPC分类号： H04N5/217 , H01L27/146 , H04N5/3745
CPC分类号： H04N5/361 , H01L27/14609 , H01L27/14612 , H01L27/14614 , H01L27/14623 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/14689 , H04N5/2176 , H04N5/374 , H04N5/37457 , H04N5/378
摘要： A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.
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公开(公告)号：US11082649B2
公开(公告)日：2021-08-03
申请号：US16616618
申请日：2018-05-18
发明人： Masaaki Takizawa , Yorito Sakano
IPC分类号： H04N5/359 , H04N5/369 , H04N5/3745
摘要： The present disclosure relates to a solid-state imaging device and an electronic device capable of effectively preventing blooming. Provided is a solid-state imaging device including: a pixel array portion in which a plurality of pixels is two-dimensionally arranged, in which the pixels each include an in-pixel capacitance and a counter electrode of the in-pixel capacitance, the in-pixel capacitance being provided on a side opposite to a light incident surface of a photoelectric conversion element provided in a semiconductor substrate, the counter electrode being provided in the semiconductor substrate. The present disclosure can be applied to, for example, a back-illuminated CMOS image sensor.
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