公开(公告)号：US20210336003A1

公开(公告)日：2021-10-28

申请号：US17254107

申请日：2019-01-11

Applicant: South China Normal University

Inventor： Richard Notzel ,  Peng Wang ,  Stefano Sanguinetti ,  Guofu Zhou

IPC: H01L29/06 ,  H01L29/20 ,  H01L21/02

Abstract: Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (12). Further provided are methods for preparing the nanowire array and the optoelectronic device.

公开(公告)号：US12087868B2

公开(公告)日：2024-09-10

申请号：US17629343

申请日：2019-09-11

Applicant: SOUTH CHINA NORMAL UNIVERSITY

Inventor： Richard Notzel

IPC: H01L29/885 ,  H01L21/02 ,  H01L29/20 ,  H01L29/66 ,  H02M7/06

CPC classification number: H01L29/885 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02631 ,  H01L29/2003 ,  H01L29/66204 ,  H02M7/06

Abstract: An epitaxial wafer, a method of manufacturing the epitaxial wafer, a diode, and a current rectifier are provided. The epitaxial wafer comprises a Si substrate layer; an insulating layer formed on the Si substrate layer; and a nitride semiconductor layer formed on a surface of the insulating layer facing away from the Si substrate layer; wherein the insulating layer has a thickness configured such that under a forward bias voltage, the insulating layer may allow electrons and holes to pass from one side to the other side of the insulating layer via quantum tunneling so as to allow a forward current flow.

公开(公告)号：US11521852B2

公开(公告)日：2022-12-06

申请号：US17254102

申请日：2018-12-19

Applicant: South China Normal University

Inventor： Richard Notzel ,  Peng Wang ,  Stefano Sanguinetti ,  Guofu Zhou

IPC: H01L21/00 ,  H01L21/02

Abstract: Provided are a method for preparing an InGaN-based epitaxial layer on a Si substrate (12), as well as a silicon-based InGaN epitaxial layer prepared by the method. The method may include the steps of: 1) directly growing a first InGaN-based layer (11) on a Si substrate (12); and 2) growing a second InGaN-based layer on the first InGaN-based layer (11).

公开(公告)号：US12255231B2

公开(公告)日：2025-03-18

申请号：US17254107

申请日：2019-01-11

Applicant: South China Normal University

Inventor： Richard Notzel ,  Peng Wang ,  Stefano Sanguinetti ,  Guofu Zhou

IPC: H01L29/06 ,  B82Y40/00 ,  H01L21/02 ,  H01L29/20

Abstract: Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (12). Further provided are methods for preparing the nanowire array and the optoelectronic device.

公开(公告)号：US20210272802A1

公开(公告)日：2021-09-02

申请号：US17254102

申请日：2018-12-19

Applicant: South China Normal University

Inventor： Richard Notzel ,  Peng Wang ,  Stefano Sanguinetti ,  Guofu Zhou

IPC: H01L21/02

Abstract: Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (12). Further provided are methods for preparing the nanowire array and the optoelectronic device.