公开(公告)号：US20220376094A1

公开(公告)日：2022-11-24

申请号：US17762212

申请日：2020-08-26

Applicant: SOUTHEAST UNIVERSITY ,  CSMC TECHNOLOGIES FAB2 CO., LTD.

Inventor： Long ZHANG ,  Jie MA ,  Yan GU ,  Sen ZHANG ,  Jing ZHU ,  Jinli GONG ,  Weifeng SUN ,  Longxing SHI

IPC: H01L29/739 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06

Abstract: An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region.