公开(公告)号：US20130288486A1

公开(公告)日：2013-10-31

申请号：US13869369

申请日：2013-04-24

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： KATHRINE CROOK ,  ANDREW PRICE ,  MARK CARRUTHERS ,  DANIEL ARCHARD ,  STEPHEN BURGESS

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/402 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0234

Abstract: The invention relates to a method of depositing silicon dioxide films using plasma enhanced chemical vapour deposition (PECVD) and more particularly using tetraethyl orthosilicate (TEOS). The process can be carried out at standard temperatures and also at low temperatures which is useful for manufacturing wafers with through silicon vias.

Abstract translation: 本发明涉及一种使用等离子体增强化学气相沉积（PECVD）沉积二氧化硅膜并更具体地使用原硅酸四乙酯（TEOS）的方法。 该方法可以在标准温度下和低温下进行，这对于通过硅通孔制造晶圆是有用的。