公开(公告)号：US20170178901A1

公开(公告)日：2017-06-22

申请号：US15383162

申请日：2016-12-19

Applicant: SPTS Technologies Limited

Inventor： KATHRINE CROOK ,  STEPHEN R. BURGESS ,  ANDREW PRICE

IPC: H01L21/02 ,  H01L29/06

CPC classification number: H01L21/02304 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02381 ,  H01L29/0649

Abstract: A method is for improving adhesion between a semiconductor substrate and a dielectric layer. The method includes depositing a silicon dioxide adhesion layer onto the semiconductor substrate by a first plasma enhanced chemical vapor deposition (PECVD) process, and depositing the dielectric layer onto the adhesion layer by a second PECVD process. The first PECVD process is performed in a gaseous atmosphere comprising tetraethyl orthosilicate (TEOS) either in the absence of O2 or with O2 introduced into the process at a flow rate of 250 sccm or less.

公开(公告)号：US20130288486A1

公开(公告)日：2013-10-31

申请号：US13869369

申请日：2013-04-24

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： KATHRINE CROOK ,  ANDREW PRICE ,  MARK CARRUTHERS ,  DANIEL ARCHARD ,  STEPHEN BURGESS

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/402 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0234

Abstract: The invention relates to a method of depositing silicon dioxide films using plasma enhanced chemical vapour deposition (PECVD) and more particularly using tetraethyl orthosilicate (TEOS). The process can be carried out at standard temperatures and also at low temperatures which is useful for manufacturing wafers with through silicon vias.

Abstract translation: 本发明涉及一种使用等离子体增强化学气相沉积（PECVD）沉积二氧化硅膜并更具体地使用原硅酸四乙酯（TEOS）的方法。 该方法可以在标准温度下和低温下进行，这对于通过硅通孔制造晶圆是有用的。

公开(公告)号：US20170342556A1

公开(公告)日：2017-11-30

申请号：US15590063

申请日：2017-05-09

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： KATHRINE CROOK ,  MARK CARRUTHERS ,  ANDREW PRICE

IPC: C23C16/44 ,  B08B7/00 ,  H01J37/32

CPC classification number: C23C16/4405 ,  B08B7/0035 ,  C23C16/452 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32862 ,  H01J37/32963 ,  H01J2237/335

Abstract: A method of cleaning a chamber of a plasma processing device with radicals includes creating a plasma within a remote plasma source which is separated from the chamber, the plasma including radicals and ions, cleaning the chamber by allowing radicals to enter the chamber from the remote plasma source while preventing the majority of the ions created in the remote plasma source from entering the chamber, detecting a DC bias developed on a component of the chamber during cleaning; and using the detected DC bias to determine an end-point of the cleaning and, on determination of the end-point, to stop the cleaning.

公开(公告)号：US20160265108A1

公开(公告)日：2016-09-15

申请号：US15064631

申请日：2016-03-09

Applicant: SPTS Technologies Limited

Inventor： DANIEL T. ARCHARD ,  STEPHEN R. BURGESS ,  MARK I. CARRUTHERS ,  ANDREW PRICE ,  KEITH E. BUCHANAN ,  KATHERINE CROOK

IPC: C23C16/455 ,  C23C16/513

CPC classification number: C23C16/455 ,  C23C16/513 ,  H01J37/32633 ,  H01J37/32834

Abstract: A plasma-enhanced chemical vapour deposition (PE-CVD) apparatus includes a chamber including a circumferential pumping channel, a substrate support disposed within the chamber, one or more gas inlets for introducing gas into the chamber, a plasma production device for producing a plasma in the chamber, and an upper and a lower element positioned in the chamber. The upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel. The upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.

Abstract translation: 等离子体增强化学气相沉积（PE-CVD）装置包括：腔室，包括圆周泵浦通道，设置在腔室内的衬底支撑件，用于将气体引入腔室的一个或多个气体入口;用于产生等离子体的等离子体生产装置 在腔室中，以及位于腔室中的上部和下部元件。 上部元件与衬底支撑件间隔开以限制等离子体并且限定第一周向泵送间隙，并且上部元件用作圆周泵送通道的径向向内的壁。 上部和下部元件径向间隔开以限定作为周向泵送通道入口的第二圆周泵送间隙，其中第二圆周泵送间隙比第一圆周泵送间隙宽。