公开(公告)号：US20200090973A1

公开(公告)日：2020-03-19

申请号：US16567865

申请日：2019-09-11

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： NICOLAS LAUNAY

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

Abstract: A substrate support includes an electrostatic chuck having an upper surface, and a cover positioned on the electrostatic chuck to cover the upper surface thereof. The cover includes a first face adjacent the upper surface of the electrostatic chuck, a second face for supporting a substrate, and one or more conduits extending through the cover to permit a cooling gas to flow from the second face to the first face. The cover is made from a dielectric material.

公开(公告)号：US20170338124A1

公开(公告)日：2017-11-23

申请号：US15588779

申请日：2017-05-08

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： NICOLAS LAUNAY ,  MAXINE VARVARA

IPC: H01L21/3065 ,  H01J37/32 ,  H01J37/305 ,  H01L21/67 ,  H01L21/768 ,  H01L21/683

CPC classification number: H01L21/30655 ,  H01J37/3053 ,  H01J37/32082 ,  H01J37/32366 ,  H01J37/32403 ,  H01J37/32422 ,  H01J37/32577 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/76898

Abstract: A method of plasma etching one or more features in a silicon substrate includes performing a main etch using a cyclical etch process in which a deposition step and an etch step are alternately repeated, and performing an over etch to complete the plasma etching of the features. The over etch includes one or more etch steps of a first kind and one or more etch steps of a second kind, each of the etch steps of the first and second kind include etching by ion bombardment of the silicon substrate. The ion bombardment during the one or more etch steps of the second kind has an inward inclination with respect to ion bombardment during the one or more etch steps of the first kind.