公开(公告)号：US10446374B2

公开(公告)日：2019-10-15

申请号：US15446052

申请日：2017-03-01

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Paul Bennett

IPC: H01J37/32 ,  B08B7/00 ,  B08B9/08 ,  C23C16/44 ,  C23C16/448 ,  C23C16/503 ,  C23C16/505 ,  H01L21/67

Abstract: A plasma processing apparatus for plasma processing a substrate comprising includes a chamber having one or more walls, in which a portion of the walls of the chamber is an electrode structure formed from a metallic material and configured to act as a primary winding of an inductively coupled plasma source, and an electrical signal supply device for supplying an electrical signal that drives the electrode structure as a primary winding of an inductively coupled plasma source to sustain an inductively coupled plasma within the chamber.

公开(公告)号：US11189463B2

公开(公告)日：2021-11-30

申请号：US16284649

申请日：2019-02-25

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： Paul Bennett

IPC: H01J37/32

Abstract: A plasma generating arrangement includes a plurality of plasma sources, each plasma source including a respective antenna coil assembly electrically coupled to a common electrical terminal via a respective transmission line. Each transmission line is configured to communicate a radio frequency electrical power signal from the common electrical terminal to the respective antenna coil assembly, and has a length which is an odd multiple of ¼ of the wavelength of the radio frequency electrical power signal.

公开(公告)号：US10720308B2

公开(公告)日：2020-07-21

申请号：US16541582

申请日：2019-08-15

Applicant: SPTS Technologies Limited

Inventor： Paul Bennett

IPC: H01J37/32 ,  H05H1/46

Abstract: A plasma apparatus includes a remote plasma source, a substrate processing chamber, and a connector which connects the remote plasma source to the substrate processing chamber. The remote plasma source includes a continuous peripheral wall structure that surrounds an inner channel, and that includes an electrode structure that defines at least a part of an internal channel extending internally within the continuous peripheral wall structure in which the inductively coupled plasma can be sustained. The remote plasma source also includes an electrical signal supply device for supplying an electrical signal that drives the electrode structure, and a plasma outlet which is in communication with the internal channel. The connector is in connection with the plasma outlet of the remote plasma source and the substrate processing chamber so that at least some components of the inductively coupled plasma sustained in the internal channel can be introduced to the substrate processing chamber.

公开(公告)号：US20200058466A1

公开(公告)日：2020-02-20

申请号：US16541582

申请日：2019-08-15

Applicant: SPTS Technologies Limited

Inventor： Paul Bennett

IPC: H01J37/32 ,  H05H1/46

Abstract: A plasma apparatus includes a remote plasma source, a substrate processing chamber, and a connector which connects the remote plasma source to the substrate processing chamber. The remote plasma source includes a continuous peripheral wall structure that surrounds an inner channel, and that includes an electrode structure that defines at least a part of an internal channel extending internally within the continuous peripheral wall structure in which the inductively coupled plasma can be sustained. The remote plasma source also includes an electrical signal supply device for supplying an electrical signal that drives the electrode structure, and a plasma outlet which is in communication with the internal channel. The connector is in connection with the plasma outlet of the remote plasma source and the substrate processing chamber so that at least some components of the inductively coupled plasma sustained in the internal channel can be introduced to the substrate processing chamber.