公开(公告)号：US20230170188A1

公开(公告)日：2023-06-01

申请号：US17983341

申请日：2022-11-08

Applicant: SPTS Technologies Limited

Inventor： Alex Huw Wood ,  Kevin Riddell ,  Huma Ashraf ,  Janet Hopkins

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32816 ,  H01J2237/3343 ,  H01J2237/182 ,  H01J37/321

Abstract: An additive-containing aluminium nitride film is plasma etched. The additive-containing aluminium nitride film contains an additive element selected from scandium, yttrium or erbium. A workpiece is placed upon a platen within a plasma chamber. The workpiece includes a substrate having an additive-containing aluminium nitride film deposited thereon and a mask disposed upon the additive-containing aluminium nitride film, which defines at least one trench. A first etching gas is introduced into the chamber with a first flow rate, a second etching gas is introduced into the chamber with a second flow rate, and a plasma is established within the chamber to etch the additive-containing aluminium nitride film exposed within the trench. The first etching gas comprises boron trichloride and the second etching gas comprises chlorine. A ratio of the first flow rate to the second flow rate is greater than or equal to 1:1.