公开(公告)号：US20210225778A1

公开(公告)日：2021-07-22

申请号：US17032005

申请日：2020-09-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： YoungCheol Kim ,  ChoonHeung Lee ,  WonGyou Kim

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/49 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device has a substrate and a plurality of bond wires is disposed in a pattern across on the substrate. The pattern of bond wires can be a plurality of rows of bond wires. A plurality of electrical components is disposed over the substrate as an SIP module. An encapsulant is deposited over the substrate, electrical components, and bond wire. An opening is formed in the encapsulant extending to the bond wire. The opening can be a trench extending across the bond wires disposed on the substrate, or a plurality of openings individually exposing each of a plurality of bond wires. A conductive material is disposed in the opening. A shielding layer is formed over the encapsulant and in contact with the conductive material. The shielding layer, conductive material, and bond wires reduce the effects of EMI, RFI, and other inter-device interference.

公开(公告)号：US12009314B2

公开(公告)日：2024-06-11

申请号：US17819271

申请日：2022-08-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： YoungCheol Kim ,  ChoonHeung Lee ,  WonGyou Kim

IPC: H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/49 ,  H01L23/498

CPC classification number: H01L23/552 ,  H01L21/4853 ,  H01L21/4889 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/49 ,  H01L23/49838 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/3025

Abstract: A semiconductor device has a substrate and a plurality of bond wires is disposed in a pattern across on the substrate. The pattern of bond wires can be a plurality of rows of bond wires. A plurality of electrical components is disposed over the substrate as an SIP module. An encapsulant is deposited over the substrate, electrical components, and bond wire. An opening is formed in the encapsulant extending to the bond wire. The opening can be a trench extending across the bond wires disposed on the substrate, or a plurality of openings individually exposing each of a plurality of bond wires. A conductive material is disposed in the opening. A shielding layer is formed over the encapsulant and in contact with the conductive material. The shielding layer, conductive material, and bond wires reduce the effects of EMI, RFI, and other inter-device interference.

公开(公告)号：US20220384361A1

公开(公告)日：2022-12-01

申请号：US17819271

申请日：2022-08-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： YoungCheol Kim ,  ChoonHeung Lee ,  WonGyou Kim

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L23/49

Abstract: A semiconductor device has a substrate and a plurality of bond wires is disposed in a pattern across on the substrate. The pattern of bond wires can be a plurality of rows of bond wires. A plurality of electrical components is disposed over the substrate as an SIP module. An encapsulant is deposited over the substrate, electrical components, and bond wire. An opening is formed in the encapsulant extending to the bond wire. The opening can be a trench extending across the bond wires disposed on the substrate, or a plurality of openings individually exposing each of a plurality of bond wires. A conductive material is disposed in the opening. A shielding layer is formed over the encapsulant and in contact with the conductive material. The shielding layer, conductive material, and bond wires reduce the effects of EMI, RFI, and other inter-device interference.

公开(公告)号：US11450618B2

公开(公告)日：2022-09-20

申请号：US17032005

申请日：2020-09-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： YoungCheol Kim ,  ChoonHeung Lee ,  WonGyou Kim

IPC: H01L23/522 ,  H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L23/49

Abstract: A semiconductor device has a substrate and a plurality of bond wires is disposed in a pattern across on the substrate. The pattern of bond wires can be a plurality of rows of bond wires. A plurality of electrical components is disposed over the substrate as an SIP module. An encapsulant is deposited over the substrate, electrical components, and bond wire. An opening is formed in the encapsulant extending to the bond wire. The opening can be a trench extending across the bond wires disposed on the substrate, or a plurality of openings individually exposing each of a plurality of bond wires. A conductive material is disposed in the opening. A shielding layer is formed over the encapsulant and in contact with the conductive material. The shielding layer, conductive material, and bond wires reduce the effects of EMI, RFI, and other inter-device interference.