公开(公告)号：US20210028122A1

公开(公告)日：2021-01-28

申请号：US17068482

申请日：2020-10-12

申请人： STATS ChipPAC Pte. Ltd.

发明人： Dong Won Son ,  Byeonghoon Kim ,  Sung Ho Choi ,  Sung Jae Lim ,  Jong Ho Shin ,  SungWon Cho ,  ChangOh Kim ,  KyoungHee Park

IPC分类号： H01L23/552 ,  H01L23/31 ,  H01L23/00

摘要： A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.

公开(公告)号：US11688697B2

公开(公告)日：2023-06-27

申请号：US17662977

申请日：2022-05-11

申请人： STATS ChipPAC Pte. Ltd.

发明人： Dong Won Son ,  Byeonghoon Kim ,  Sung Ho Choi ,  Sung Jae Lim ,  Jong Ho Shin ,  SungWon Cho ,  ChangOh Kim ,  KyoungHee Park

IPC分类号： H01L23/552 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L23/552 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/49816 ,  H01L23/562 ,  H01L24/14 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/181 ,  H01L2924/3025

摘要： A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.

公开(公告)号：US11355452B2

公开(公告)日：2022-06-07

申请号：US17068482

申请日：2020-10-12

申请人： STATS ChipPAC Pte. Ltd.

发明人： Dong Won Son ,  Byeonghoon Kim ,  Sung Ho Choi ,  Sung Jae Lim ,  Jong Ho Shin ,  SungWon Cho ,  ChangOh Kim ,  KyoungHee Park

IPC分类号： H01L23/34 ,  H01L23/28 ,  H01L21/00 ,  H05K7/20 ,  H01L23/552 ,  H01L23/31 ,  H01L23/00 ,  H01L23/498 ,  H01L23/367

摘要： A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.

公开(公告)号：US20220270983A1

公开(公告)日：2022-08-25

申请号：US17662977

申请日：2022-05-11

申请人： STATS ChipPAC Pte. Ltd.

发明人： Dong Won Son ,  Byeonghoon Kim ,  Sung Ho Choi ,  Sung Jae Lim ,  Jong Ho Shin ,  SungWon Cho ,  ChangOh Kim ,  KyoungHee Park

IPC分类号： H01L23/552 ,  H01L23/31 ,  H01L23/00 ,  H01L23/498 ,  H01L23/367

摘要： A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.