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1.发明授权公开(公告)号：US09007848B2
公开(公告)日：2015-04-14
申请号：US13754427
申请日：2013-01-30
Applicant: STMicroelectronics S.A.
Inventor： Anis Feki
Abstract: A volatile memory includes volatile memory cells in which data write and read operations are performed. The memory cells are arranged in rows and in columns and are distributed in first separate groups of memory cells for each column. The memory includes, for each column, a write bit line dedicated to write operations and connected to all the memory cells of the column and read bit lines dedicated to read operations. Each read bit line is connected to all the memory cells of one of the first groups of memory cells. Each memory cell in the column is connected to a single one of the read bit lines.
Abstract translation: 易失性存储器包括执行数据写入和读取操作的易失性存储器单元。 存储单元以行和列排列并且分布在每列的第一分离的存储单元组中。 对于每列，存储器包括专用于写操作并连接到列的所有存储器单元的写位线，以及专用于读操作的读位线。 每个读位线连接到第一组存储器单元之一的所有存储单元。 列中的每个存储单元连接到单个读取位线。
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2.发明申请公开(公告)号：US20130201766A1
公开(公告)日：2013-08-08
申请号：US13754427
申请日：2013-01-30
Applicant: STMICROELECTRONICS S.A.
Inventor： Anis Feki
Abstract: A volatile memory includes volatile memory cells in which data write and read operations are performed. The memory cells are arranged in rows and in columns and are distributed in first separate groups of memory cells for each column. The memory includes, for each column, a write bit line dedicated to write operations and connected to all the memory cells of the column and read bit lines dedicated to read operations. Each read bit line is connected to all the memory cells of one of the first groups of memory cells. Each memory cell in the column is connected to a single one of the read bit lines.
Abstract translation: 易失性存储器包括执行数据写入和读取操作的易失性存储器单元。 存储单元以行和列排列并且分布在每列的第一分离的存储单元组中。 对于每列，存储器包括专用于写操作并连接到列的所有存储器单元的写位线，以及专用于读操作的读位线。 每个读位线连接到第一组存储器单元之一的所有存储单元。 列中的每个存储单元连接到单个读取位线。
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