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公开(公告)号：US11862707B2
公开(公告)日：2024-01-02
申请号：US17396154
申请日：2021-08-06
IPC分类号： H01L29/66 , H01L29/423 , H01L29/778 , H01L29/205 , H01L29/20
CPC分类号： H01L29/66462 , H01L29/205 , H01L29/4236 , H01L29/42376 , H01L29/7786 , H01L29/7787 , H01L29/2003
摘要： A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.
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公开(公告)号：US10522646B2
公开(公告)日：2019-12-31
申请号：US15159045
申请日：2016-05-19
IPC分类号： H01L29/15 , H01L29/66 , H01L29/423 , H01L29/778 , H01L29/205 , H01L29/20
摘要： A HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.
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公开(公告)号：US11489068B2
公开(公告)日：2022-11-01
申请号：US17115459
申请日：2020-12-08
IPC分类号： H01L29/778 , H01L29/66 , H01L29/06 , H01L21/02 , H01L29/20 , H01L29/205 , H01L29/40 , H01L29/417 , H01L29/423
摘要： An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.
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公开(公告)号：US20200091313A1
公开(公告)日：2020-03-19
申请号：US16690035
申请日：2019-11-20
IPC分类号： H01L29/66 , H01L29/778 , H01L29/205 , H01L29/423
摘要： A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.
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公开(公告)号：US20210175350A1
公开(公告)日：2021-06-10
申请号：US17116465
申请日：2020-12-09
IPC分类号： H01L29/778 , H01L29/40 , H01L29/205 , H01L29/20 , H01L29/66
摘要： An HEMT transistor includes a semiconductor body having a semiconductive heterostructure. A gate region, of conductive material, is arranged above and in contact with the semiconductor body. A first insulating layer extends over the semiconductor body, laterally to the conductive gate region. A second insulating layer extends over the first insulating layer and the gate region. A first field plate region, of conductive material, extends between the first and the second insulating layers, laterally spaced from the conductive gate region along a first direction. A second field plate region, of conductive material, extends over the second insulating layer, and the second field plate region overlies and is vertically aligned with the first field plate region.
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公开(公告)号：US11101363B2
公开(公告)日：2021-08-24
申请号：US16690035
申请日：2019-11-20
IPC分类号： H01L29/15 , H01L29/66 , H01L29/423 , H01L29/778 , H01L29/205 , H01L29/20
摘要： A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.
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公开(公告)号：US10892357B2
公开(公告)日：2021-01-12
申请号：US16431642
申请日：2019-06-04
IPC分类号： H01L29/778 , H01L29/66 , H01L29/06 , H01L21/02 , H01L29/20 , H01L29/205 , H01L29/40 , H01L29/417 , H01L29/423
摘要： An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.
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8.发明授权公开(公告)号：US10516041B2
公开(公告)日：2019-12-24
申请号：US16004257
申请日：2018-06-08
IPC分类号： H01L29/778 , H01L29/20 , H01L29/423 , H01L29/08 , H01L29/417 , H01L29/66 , H01L29/10 , H01L29/207
摘要： An HEMT includes a buffer layer, a hole-supply layer on the buffer layer, a heterostructure on the hole-supply layer, and a source electrode. The hole-supply layer is made of P-type doped semiconductor material, the buffer layer is doped with carbon, and the source electrode is in direct electrical contact with the hole-supply layer, such that the hole-supply layer can be biased to facilitate the transport of holes from the hole-supply layer to the buffer layer.
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公开(公告)号：US10381470B2
公开(公告)日：2019-08-13
申请号：US15393945
申请日：2016-12-29
IPC分类号： H01L29/778 , H01L21/02 , H01L29/20 , H01L29/205 , H01L29/40 , H01L29/66 , H01L29/06 , H01L29/417 , H01L29/423
摘要： An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.
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公开(公告)号：US20170345922A1
公开(公告)日：2017-11-30
申请号：US15393945
申请日：2016-12-29
IPC分类号： H01L29/778 , H01L29/205 , H01L21/02 , H01L29/20 , H01L29/66 , H01L29/40
CPC分类号： H01L29/7787 , H01L21/02458 , H01L21/0254 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/41766 , H01L29/4236 , H01L29/42376 , H01L29/66462 , H01L29/66522 , H01L29/7786
摘要： An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.
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