公开(公告)号：US11489068B2

公开(公告)日：2022-11-01

申请号：US17115459

申请日：2020-12-08

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ferdinando Iucolano ,  Alessandro Chini

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/06 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423

Abstract: An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.

公开(公告)号：US20200091313A1

公开(公告)日：2020-03-19

申请号：US16690035

申请日：2019-11-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando IUCOLANO ,  Alfonso PATTI ,  Alessandro Chini

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/205 ,  H01L29/423

Abstract: A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.

公开(公告)号：US12148823B2

公开(公告)日：2024-11-19

申请号：US17977971

申请日：2022-10-31

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ferdinando Iucolano ,  Alessandro Chini

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.

公开(公告)号：US11862707B2

公开(公告)日：2024-01-02

申请号：US17396154

申请日：2021-08-06

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Alfonso Patti ,  Alessandro Chini

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/778 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/2003

Abstract: A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.

公开(公告)号：US10522646B2

公开(公告)日：2019-12-31

申请号：US15159045

申请日：2016-05-19

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Alfonso Patti ,  Alessandro Chini

IPC: H01L29/15 ,  H01L29/66 ,  H01L29/423 ,  H01L29/778 ,  H01L29/205 ,  H01L29/20

Abstract: A HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.

公开(公告)号：US12218231B2

公开(公告)日：2025-02-04

申请号：US17116465

申请日：2020-12-09

Applicant: STMicroelectronics S.r.l.

Inventor： Ferdinando Iucolano ,  Alessandro Chini

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66

Abstract: An HEMT transistor includes a semiconductor body having a semiconductive heterostructure. A gate region, of conductive material, is arranged above and in contact with the semiconductor body. A first insulating layer extends over the semiconductor body, laterally to the conductive gate region. A second insulating layer extends over the first insulating layer and the gate region. A first field plate region, of conductive material, extends between the first and the second insulating layers, laterally spaced from the conductive gate region along a first direction. A second field plate region, of conductive material, extends over the second insulating layer, and the second field plate region overlies and is vertically aligned with the first field plate region.

公开(公告)号：US20210175350A1

公开(公告)日：2021-06-10

申请号：US17116465

申请日：2020-12-09

Applicant: STMicroelectronics S.r.l.

Inventor： Ferdinando IUCOLANO ,  Alessandro Chini

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/205 ,  H01L29/20 ,  H01L29/66

Abstract: An HEMT transistor includes a semiconductor body having a semiconductive heterostructure. A gate region, of conductive material, is arranged above and in contact with the semiconductor body. A first insulating layer extends over the semiconductor body, laterally to the conductive gate region. A second insulating layer extends over the first insulating layer and the gate region. A first field plate region, of conductive material, extends between the first and the second insulating layers, laterally spaced from the conductive gate region along a first direction. A second field plate region, of conductive material, extends over the second insulating layer, and the second field plate region overlies and is vertically aligned with the first field plate region.

公开(公告)号：US20250040173A1

公开(公告)日：2025-01-30

申请号：US18912488

申请日：2024-10-10

Applicant: STMicroelectronics S.r.l.

Inventor： Ferdinando IUCOLANO ,  Alessandro Chini

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.

公开(公告)号：US11101363B2

公开(公告)日：2021-08-24

申请号：US16690035

申请日：2019-11-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Alfonso Patti ,  Alessandro Chini

IPC: H01L29/15 ,  H01L29/66 ,  H01L29/423 ,  H01L29/778 ,  H01L29/205 ,  H01L29/20

Abstract: A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.

公开(公告)号：US10892357B2

公开(公告)日：2021-01-12

申请号：US16431642

申请日：2019-06-04

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Alessandro Chini

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/06 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423

Abstract: An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.