公开(公告)号：US09991316B2

公开(公告)日：2018-06-05

申请号：US15374304

申请日：2016-12-09

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Paola Zuliani ,  Gianluigi Confalonieri ,  Annalisa Gilardini ,  Carlo Luigi Prelini

IPC: H01L29/70 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L27/2463 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/16 ,  H01L45/1683

Abstract: A phase-change memory cell, comprising: a substrate housing a transistor, for selection of the memory cell, that includes a first conduction electrode; a first electrical-insulation layer on the selection transistor; a first conductive through via through the electrical-insulation layer electrically coupled to the first conduction electrode; a heater element including a first portion in electrical contact with the first conductive through via and a second portion that extends in electrical continuity with, and orthogonal to, the first portion; a first protection element extending on the first and second portions of the heater element; a second protection element extending in direct lateral contact with the first portion of the heater element and with the first protection element; and a phase-change region extending over the heater element in electrical and thermal contact therewith.