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1.发明授权公开(公告)号：US10954121B2
公开(公告)日：2021-03-23
申请号：US16708271
申请日：2019-12-09
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Laura Oggioni , Matteo Garavaglia , Roberto Somaschini
Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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Patent Agency Ranking
2.发明授权公开(公告)号：US10227233B2
公开(公告)日：2019-03-12
申请号：US15379091
申请日：2016-12-14
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Laura Oggioni , Matteo Garavaglia , Roberto Somaschini
Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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3.发明授权Method for manufacturing a die assembly having a small thickness and die assembly relating thereto 有权具有小厚度的模具组件的制造方法和与其相关的模具组件公开(公告)号：US09327964B2
公开(公告)日：2016-05-03
申请号：US14524661
申请日：2014-10-27
Applicant: STMicroelectronics S.r.l.
Inventor： Giorgio Allegato , Marco Ferrera , Matteo Garavaglia , Lorenzo Corso
CPC classification number: B81B7/0074 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/097 , B81C1/00238 , B81C1/00325 , B81C2203/0118 , B81C2203/0792
Abstract: A method for manufacturing a die assembly, including the steps of: bonding a first wafer of semiconductor material to a second wafer, the second wafer including a respective semiconductor body having a respective initial thickness and forming an integrated electronic circuit; and subsequently reducing the initial thickness of the semiconductor body of the second wafer; and subsequently bonding the second wafer to a third wafer, the third wafer forming a micro-electromechanical sensing structure.
Abstract translation: 一种用于制造模具组件的方法，包括以下步骤：将半导体材料的第一晶片接合到第二晶片，所述第二晶片包括具有各自的初始厚度的相应的半导体本体，并形成集成的电子电路; 随后减小第二晶片的半导体本体的初始厚度; 并且随后将所述第二晶片接合到第三晶片，所述第三晶片形成微机电感测结构。
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4.发明申请METHOD FOR MANUFACTURING A DIE ASSEMBLY HAVING A SMALL THICKNESS AND DIE ASSEMBLY RELATING THERETO 有权用于制造具有小厚度的模具组件的方法和与其相关的模具组件公开(公告)号：US20150115378A1
公开(公告)日：2015-04-30
申请号：US14524661
申请日：2014-10-27
Applicant: STMicroelectronics S.r.l.
Inventor： Giorgio Allegato , Marco Ferrera , Matteo Garavaglia , Lorenzo Corso
CPC classification number: B81B7/0074 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/097 , B81C1/00238 , B81C1/00325 , B81C2203/0118 , B81C2203/0792
Abstract: A method for manufacturing a die assembly, including the steps of: bonding a first wafer of semiconductor material to a second wafer, the second wafer including a respective semiconductor body having a respective initial thickness and forming an integrated electronic circuit; and subsequently reducing the initial thickness of the semiconductor body of the second wafer; and subsequently bonding the second wafer to a third wafer, the third wafer forming a micro-electromechanical sensing structure.
Abstract translation: 一种用于制造模具组件的方法，包括以下步骤：将半导体材料的第一晶片接合到第二晶片，所述第二晶片包括具有各自的初始厚度的相应的半导体本体，并形成集成的电子电路; 随后减小第二晶片的半导体本体的初始厚度; 并且随后将所述第二晶片接合到第三晶片，所述第三晶片形成微机电感测结构。
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5.发明授权公开(公告)号：US10570009B2
公开(公告)日：2020-02-25
申请号：US16283254
申请日：2019-02-22
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Laura Oggioni , Matteo Garavaglia , Roberto Somaschini
Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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6.发明申请公开(公告)号：US20190185318A1
公开(公告)日：2019-06-20
申请号：US16283254
申请日：2019-02-22
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio Allegato , Laura Oggioni , Matteo Garavaglia , Roberto Somaschini
CPC classification number: B81C1/00269 , B81B3/0097 , B81B2201/0242 , B81B2201/0264 , B81B2201/042 , B81B2203/0315 , B81C3/001 , B81C2201/019 , B81C2203/0118 , B81C2203/019 , B81C2203/037
Abstract: A microelectromechanical device having a first substrate of semiconductor material and a second substrate of semiconductor material having a bonding recess delimited by projecting portions, monolithic therewith. The bonding recess forms a closed cavity with the first substrate. A bonding structure is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.
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