公开(公告)号：US20200294950A1

公开(公告)日：2020-09-17

申请号：US16811964

申请日：2020-03-06

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Michele CALABRETTA ,  Crocifisso Marco Antonio RENNA ,  Sebastiano RUSSO ,  Marco Alfio TORRISI

IPC: H01L23/00 ,  H01L23/495 ,  H01L23/31 ,  C22C13/00 ,  B23K35/26

Abstract: A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.

公开(公告)号：US20230080594A1

公开(公告)日：2023-03-16

申请号：US17933016

申请日：2022-09-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Michele CALABRETTA ,  Crocifisso Marco Antonio RENNA ,  Sebastiano RUSSO ,  Marco Alfio TORRISI

IPC: H01L23/00 ,  B23K35/26 ,  C22C13/00 ,  H01L23/31 ,  H01L23/495

Abstract: A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.

公开(公告)号：US20190326231A1

公开(公告)日：2019-10-24

申请号：US16389849

申请日：2019-04-19

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Santo Alessandro SMERZI ,  Michele CALABRETTA ,  Alessandro SITTA ,  Crocifisso Marco Antonio RENNA ,  Giuseppe D'ARRIGO

IPC: H01L23/00 ,  H01L23/06 ,  H01L23/14 ,  H01L21/52

Abstract: A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature. Furthermore, additional stress can be enhanced by means of different embodiments involving the support, such as ring or multi-layer frame.

公开(公告)号：US20210335730A1

公开(公告)日：2021-10-28

申请号：US17372115

申请日：2021-07-09

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Santo Alessandro SMERZI ,  Michele CALABRETTA ,  Alessandro SITTA ,  Crocifisso Marco Antonio RENNA ,  Giuseppe D'ARRIGO

IPC: H01L23/00 ,  H01L21/52 ,  H01L23/14 ,  H01L23/06 ,  H01L29/78

Abstract: A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature. Furthermore, additional stress can be enhanced by means of different embodiments involving the support, such as ring or multi-layer frame.

公开(公告)号：US20170248534A1

公开(公告)日：2017-08-31

申请号：US15594356

申请日：2017-05-12

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni GIRLANDO ,  Michele CALABRETTA ,  Francesco PAPPALARDO

IPC: G01N27/02 ,  G01M5/00

CPC classification number: G01N27/02 ,  G01M5/0033 ,  G01M5/0083 ,  G01N27/00 ,  H04Q9/00 ,  H04Q2209/88

Abstract: A monitoring device is for a block of building material. The monitoring device may include an electric supply line configured to be buried in the block of building material and having a flexible main cable, and flexible jumper cables coupled to the flexible main cable and extending outwardly. The monitoring device may include sensor devices configured to be buried in the block of building material and coupled to respective ones of the flexible jumper cables. Each sensor device may include a primary inductor coupled to the electric supply line at a position based upon peaks of a stationary waveform when the electric supply line is alternating current (AC) powered, and a monitoring circuit. The monitoring circuit may include an integrated sensor, and a secondary inductor magnetically coupled to the primary inductor and configured to supply the integrated sensor, and communicate through the electric supply line.