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1.发明申请公开(公告)号：US20190326231A1
公开(公告)日：2019-10-24
申请号：US16389849
申请日：2019-04-19
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Santo Alessandro SMERZI , Michele CALABRETTA , Alessandro SITTA , Crocifisso Marco Antonio RENNA , Giuseppe D'ARRIGO
Abstract: A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature. Furthermore, additional stress can be enhanced by means of different embodiments involving the support, such as ring or multi-layer frame.
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公开(公告)号：US20220120633A1
公开(公告)日：2022-04-21
申请号：US17562829
申请日：2021-12-27
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Santo Alessandro SMERZI
Abstract: A stress sensor includes: a substrate, having a face and a recess, open to the face; and a sensor chip of semiconductor material, housed in the recess and bonded to the substrate, the sensor chip being provided with a plurality of sensing components of piezoresistive material. The substrate has a thickness which is less by at least one order of magnitude with respect to a main dimension of the face. Further, the sensor chip has a thickness which is less by at least one order of magnitude with respect to the thickness of the substrate, and a Young's module of the substrate and a Young's module of the sensor chip are of the same order of magnitude.
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公开(公告)号：US20190339144A1
公开(公告)日：2019-11-07
申请号：US16512912
申请日：2019-07-16
Applicant: STMicroelectronics S.r.l.
Inventor： Santo Alessandro SMERZI
Abstract: A sensing bridge includes first and second branches in parallel, the first branch including a first resistor in series with a first switch, the second branch including a second resistor in series with a second switch. Resistances of the resistors vary with a sensed physical variable. The branches switch between first and second phases, with the first switch closed and the second switch open during the first phase, and the first switch open and the second switch closed during the second phase. A reference block generates a control signal from the resistance of the variable resistors during the first and second phases. An oscillator generates an oscillating signal during the first and second phases from the variable sense current during the first and second phases. Processing circuitry determines a value of the sensed physical value from an algebraic combination of the oscillating signal during the first and second phases.
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Patent Agency Ranking
4.发明申请公开(公告)号：US20190285509A1
公开(公告)日：2019-09-19
申请号：US16353965
申请日：2019-03-14
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Santo Alessandro SMERZI
Abstract: A stress sensor includes: a substrate, having a face and a recess, open to the face; and a sensor chip of semiconductor material, housed in the recess and bonded to the substrate, the sensor chip being provided with a plurality of sensing components of piezoresistive material. The substrate has a thickness which is less by at least one order of magnitude with respect to a main dimension of the face. Further, the sensor chip has a thickness which is less by at least one order of magnitude with respect to the thickness of the substrate, and a Young's module of the substrate and a Young's module of the sensor chip are of the same order of magnitude.
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公开(公告)号：US20220013982A1
公开(公告)日：2022-01-13
申请号：US17368554
申请日：2021-07-06
Inventor： Antonio Filippo Massimo PIZZARDI , Santo Alessandro SMERZI , Ferdinando IUCOLANO , Romeo LETOR
Abstract: An electronic device is couplable to a plurality of laser diodes and includes a control switch having a drain coupled to a drain metallization and having a source coupled to a first source metallization that is electrically couplable to cathodes of the laser diodes. Each of a plurality of first switches has a drain coupled to the drain metallization and a source coupled to a respective second source metallization that is couplable to an anode of the laser diodes. The second source metallizations are aligned with one another in a direction of alignment, overlie, in a direction orthogonal to the direction of alignment, the respective sources of the first switches, and can be aligned, in a direction orthogonal to the direction of alignment, to the respective laser diodes. At least one of the sources of the first switches can be aligned, in a direction orthogonal to the direction of alignment, to the respective laser diode.
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公开(公告)号：US20200152572A1
公开(公告)日：2020-05-14
申请号：US16676371
申请日：2019-11-06
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Santo Alessandro SMERZI , Maria Concetta NICOTRA , Ferdinando IUCOLANO
IPC: H01L23/528 , H01L23/522
Abstract: An electronic device, comprising plurality of source metal strips in a first metal level; a plurality of drain metal strips in the first metal level; a source metal bus in a second metal level above the first metal level; a drain metal bus, in the second metal level; a source pad, coupled to the source metal bus; and a drain pad, coupled to the drain metal bus. The source metal bus includes subregions shaped in such a way that, in top-plan view, each of them has a width which decreases moving away from the first conductive pad; the drain metal bus includes subregions shaped in such a way that, in top-plan view, each of them has a width which decreases moving away from the second conductive pad. The first and second subregions are interdigitated.
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公开(公告)号：US20240162153A1
公开(公告)日：2024-05-16
申请号：US18509052
申请日：2023-11-14
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Santo Alessandro SMERZI , Maria Concetta NICOTRA , Ferdinando IUCOLANO
IPC: H01L23/528 , H01L23/522
CPC classification number: H01L23/5286 , H01L23/5226 , H01L29/2003
Abstract: An electronic device, comprising plurality of source metal strips in a first metal level; a plurality of drain metal strips in the first metal level; a source metal bus in a second metal level above the first metal level; a drain metal bus, in the second metal level; a source pad, coupled to the source metal bus; and a drain pad, coupled to the drain metal bus. The source metal bus includes subregions shaped in such a way that, in top-plan view, each of them has a width which decreases moving away from the first conductive pad; the drain metal bus includes subregions shaped in such a way that, in top-plan view, each of them has a width which decreases moving away from the second conductive pad. The first and second subregions are interdigitated.
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公开(公告)号：US20210335730A1
公开(公告)日：2021-10-28
申请号：US17372115
申请日：2021-07-09
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Santo Alessandro SMERZI , Michele CALABRETTA , Alessandro SITTA , Crocifisso Marco Antonio RENNA , Giuseppe D'ARRIGO
Abstract: A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature. Furthermore, additional stress can be enhanced by means of different embodiments involving the support, such as ring or multi-layer frame.
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