公开(公告)号：US09728412B2

公开(公告)日：2017-08-08

申请号：US14970637

申请日：2015-12-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alessandra Alberti ,  Paolo Badala′ ,  Antonello Santangelo

IPC: H01L23/498 ,  H01L23/495 ,  H01L21/285 ,  H01L23/482 ,  H01L23/00

CPC classification number: H01L21/28518 ,  H01L21/28568 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05155 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/94 ,  H01L2924/01014 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/14 ,  H01L2924/01079 ,  H01L2924/00 ,  H01L2224/03

Abstract: An embodiment of an integrated device, including a chip of semiconductor material wherein an integrated circuit is integrated, is proposed; the integrated device includes a set of contact terminals for contacting the integrated circuit. At least one contact terminal of said set of contact terminals includes a contact layer of metal material being suitable to be directly coupled mechanically to an element external to the chip, and a coupling element for improving an electrical and/or mechanical coupling between the contact layer and the chip. The coupling element includes a coupling layer being formed by a combination between the metal material of the contact layer and the semiconductor material of the chip, with the coupling layer that is directly coupled to the chip and to the contact layer.

公开(公告)号：US12051725B2

公开(公告)日：2024-07-30

申请号：US18309584

申请日：2023-04-28

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Rascuna′ ,  Paolo Badala′ ,  Anna Bassi ,  Gabriele Bellocchi

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L29/1606 ,  H01L29/6603 ,  H01L29/66143 ,  H01L29/872

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.