公开(公告)号：US11670685B2

公开(公告)日：2023-06-06

申请号：US17226003

申请日：2021-04-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simone Rascuná ,  Paolo Badalá ,  Anna Bassi ,  Gabriele Bellocchi

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L29/1606 ,  H01L29/6603 ,  H01L29/66143 ,  H01L29/872

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

公开(公告)号：US12051725B2

公开(公告)日：2024-07-30

申请号：US18309584

申请日：2023-04-28

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Rascuna′ ,  Paolo Badala′ ,  Anna Bassi ,  Gabriele Bellocchi

IPC: H01L29/872 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L29/1606 ,  H01L29/6603 ,  H01L29/66143 ,  H01L29/872

Abstract: A method for manufacturing a SiC-based electronic device, that includes implanting, at a front side of a solid body of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region that extends in depth in the solid body starting from the front side and has a top surface co-planar with said front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region at temperatures comprised between 1500° C. and 2600° C. so as to form an ohmic contact region including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region and, simultaneously, activation of the dopant species of P type.

公开(公告)号：US11605751B2

公开(公告)日：2023-03-14

申请号：US17344558

申请日：2021-06-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Simone Rascuná ,  Gabriele Bellocchi ,  Paolo Badalá ,  Isodiana Crupi

IPC: H01L31/10 ,  H01L31/101 ,  H01L31/0224 ,  H01L31/103 ,  H01L31/18

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

公开(公告)号：US12224358B2

公开(公告)日：2025-02-11

申请号：US17584185

申请日：2022-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Simone Rascuna′ ,  Gabriele Bellocchi ,  Marco Santoro

IPC: H01L29/872 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66

Abstract: A Junction Barrier Schottky device includes a semiconductor body of SiC having a first conductivity. An implanted region having a second conductivity, extends into the semiconductor body from a top surface of the semiconductor body to form a junction barrier diode with the semiconductor body. An electrical terminal is in ohmic contact with the implanted region and in direct electrical contact with the top surface, laterally to the implanted region, to form a Schottky diode with the semiconductor body. The implanted region is formed by a first and a second portion electrically connected directly to each other and aligned along an alignment axis transverse to the top surface. Orthogonally to the alignment axis, the first portion has a first maximum width and the second portion has a second maximum width greater than the first maximum width.

公开(公告)号：US12125933B2

公开(公告)日：2024-10-22

申请号：US18181409

申请日：2023-03-09

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone Rascuná ,  Gabriele Bellocchi ,  Paolo Badalá ,  Isodiana Crupi

IPC: H01L31/101 ,  H01L31/0224 ,  H01L31/103 ,  H01L31/18

CPC classification number: H01L31/1016 ,  H01L31/022408 ,  H01L31/022466 ,  H01L31/103 ,  H01L31/1812 ,  H01L31/1864 ,  H01L31/1884

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.