公开(公告)号：US11658479B2

公开(公告)日：2023-05-23

申请号：US17015695

申请日：2020-09-09

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics SA

Inventor： Radhakrishnan Sithanandam ,  Divya Agarwal ,  Ghislain Troussier ,  Jean Jimenez ,  Malathi Kar

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/046 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0288 ,  H01L27/0285

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated MOSFET device. Triggering of the MOSFET device is made at both the gate terminal and the substrate (back gate) terminal. Additionally, the MOSFET device can be formed of cascoded MOSFETs.

公开(公告)号：US09997907B2

公开(公告)日：2018-06-12

申请号：US14964704

申请日：2015-12-10

Applicant: STMicroelectronics SA

Inventor： Johan Bourgeat ,  Boris Heitz ,  Jean Jimenez

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/04 ,  H01L27/0262 ,  H01L27/0285 ,  H02H9/046

Abstract: An electronic device includes first and second terminals with an electronic circuit coupled there between. The electronic circuit includes a protection circuit and a resistive-capacitive circuit. The resistive-capacitive circuit triggers the protection circuit to protect against electrostatic discharges in the presence of a current pulse between the first and second terminals. A control circuit is configured to slow down a discharge from the resistive-capacitive circuit when the protection circuit is triggered.

公开(公告)号：US20170148780A1

公开(公告)日：2017-05-25

申请号：US15096975

申请日：2016-04-12

Applicant: STMicroelectronics SA

Inventor： Johan Bourgeat ,  Jean Jimenez

IPC: H01L27/02 ,  H01L29/744 ,  H01L29/10 ,  H01L29/74

CPC classification number: H01L27/0251 ,  H01L27/0262 ,  H01L29/1095 ,  H01L29/7436 ,  H01L29/744

Abstract: An electronic device is formed by a sequence of at least two thyristors coupled in series in a same conduction direction. Each thyristor has a gate of a first conductivity type. The gates of the first conductivity type for the thyristors in the sequence are coupled together in order to form a single control gate.

公开(公告)号：US20200098743A1

公开(公告)日：2020-03-26

申请号：US16696045

申请日：2019-11-26

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L29/74 ,  H01L29/87 ,  H01L27/102 ,  H01L27/12

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US20180130788A1

公开(公告)日：2018-05-10

申请号：US15862924

申请日：2018-01-05

Applicant: STMicroelectronics SA

Inventor： Johan Bourgeat ,  Jean Jimenez

IPC: H01L27/02 ,  H01L29/10 ,  H01L29/74 ,  H01L29/744

CPC classification number: H01L27/0251 ,  H01L27/0262 ,  H01L29/1095 ,  H01L29/7436 ,  H01L29/744

Abstract: An electronic device is formed by a sequence of at least two thyristors coupled in series in a same conduction direction. Each thyristor has a gate of a first conductivity type. The gates of the first conductivity type for the thyristors in the sequence are coupled together in order to form a single control gate.

公开(公告)号：US10944257B2

公开(公告)日：2021-03-09

申请号：US15952466

申请日：2018-04-13

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics SA

Inventor： Radhakrishnan Sithanandam ,  Divya Agarwal ,  Jean Jimenez ,  Malathi Kar

IPC: H02H9/02 ,  H02H9/04 ,  H01L27/02 ,  H01L27/07 ,  H01L29/06

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated SCR device. The SCR device may include an embedded field effect transistor (FET) having an insulated gate that receives a trigger signal from an ESD detection circuit. The SCR device may alternatively include a variable substrate resistor having an insulated gate that receives a trigger signal from an ESD detection circuit.

公开(公告)号：US10515946B2

公开(公告)日：2019-12-24

申请号：US15982443

申请日：2018-05-17

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L27/12 ,  H01L27/102 ,  H01L29/74 ,  H01L29/87

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US20180269199A1

公开(公告)日：2018-09-20

申请号：US15982443

申请日：2018-05-17

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L27/102 ,  H01L27/12 ,  H01L29/74 ,  H01L29/87

CPC classification number: H01L27/0262 ,  H01L27/1027 ,  H01L27/1203 ,  H01L29/74 ,  H01L29/7408 ,  H01L29/7436 ,  H01L29/87 ,  H01L2924/1301

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US11444077B2

公开(公告)日：2022-09-13

申请号：US16696045

申请日：2019-11-26

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H02H9/04 ,  H01L27/12 ,  H01L27/102 ,  H01L29/74 ,  H01L29/87

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US11063429B2

公开(公告)日：2021-07-13

申请号：US15951806

申请日：2018-04-12

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics SA

Inventor： Radhakrishnan Sithanandam ,  Divya Agarwal ,  Ghislain Troussier ,  Jean Jimenez ,  Malathi Kar

IPC: H02H9/04 ,  H01L27/02

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated MOSFET device. Triggering of the MOSFET device is made at both the gate terminal and the substrate (back gate) terminal. Additionally, the MOSFET device can be formed of cascoded MOSFETs.