公开(公告)号：US08656320B2

公开(公告)日：2014-02-18

申请号：US13937633

申请日：2013-07-09

Applicant: STMicroElectronics (Crolles 2) SAS

Inventor： Christian Gardin

IPC: G06F17/50 ,  G06K9/00 ,  G21K5/00 ,  G03F1/00 ,  G06F19/00 ,  G03F1/36 ,  G03F1/38

CPC classification number: G06F17/5081 ,  G03F1/0069 ,  G03F1/0092 ,  G03F1/30 ,  G03F1/36 ,  G03F1/38 ,  G06F17/50 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G06K9/00 ,  G21K5/00

Abstract: A method for creating a photolithography mask from a set of initial mask cells arranged to form an initial mask. The set includes first and second initial mask cells having a mask element in common within an initial region of the initial mask. The method includes a creation of a first modified mask cell and of a second modified mask cell including OPC processing operations, a comparison of the position of the mask element in common between the first modified mask cell and the second modified mask cell, and if the result of the comparison is greater than a threshold, a creation of a new mask region including an optical proximity correction processing operation on the initial region, and a creation of the photolithography mask from the new mask region.

Abstract translation: 一种从布置成形成初始掩模的一组初始掩模单元创建光刻掩模的方法。 该组包括在初始掩模的初始区域内具有共同的掩模元件的第一和第二初始掩模单元。 该方法包括创建第一修改屏蔽单元和包括OPC处理操作的第二修改屏蔽单元，比较第一修改屏蔽单元和第二修改屏蔽单元之间共同的掩模元件的位置，以及如果 比较结果大于阈值，创建包括初始区域上的光学邻近校正处理操作的新掩模区域，以及从新掩模区域创建光刻掩模。