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    COLOR IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    COLOR IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
    彩色图像传感器及其制造方法

    公开(公告)号：US20160233258A1

    公开(公告)日：2016-08-11

    申请号：US14923799

    申请日：2015-10-27

    Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

    Inventor： Axel CROCHERIE ,  Jean-Pierre ODDOU ,  Stéphane ALLEGRET-MARET ,  Hugues LEININGER

    IPC: H01L27/146

    CPC classification number: H01L27/14621 ,  H01L27/14607 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

    Abstract: A color image sensor including an array of pixels is formed in a semiconductor layer having a back side that receives an illumination. Insulated conductive walls penetrate into the semiconductor layer from the back side and separate the pixels from one another. For each pixel, a color pixel penetrates into from 5 to 30% of a thickness of the semiconductor layer from the back side and occupies at least 90% of the surface area delimited by the walls. An electrically-conductive layer extends from the lateral wall of the filter all the way to the walls.

    Abstract translation: 包括像素阵列的彩色图像传感器形成在具有接收照明的背面的半导体层中。 绝缘导电壁从背面渗入半导体层并将像素彼此分开。 对于每个像素，彩色像素从背面渗入半导体层的厚度的5至30％，并且占据由壁限定的表面积的至少90％。 导电层从过滤器的侧壁一直延伸到壁。

    IMAGE SENSOR
    2.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20230420472A1

    公开(公告)日：2023-12-28

    申请号：US18465063

    申请日：2023-09-11

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Axel CROCHERIE

    IPC: H01L27/146

    CPC classification number: H01L27/14627 ,  H01L27/14607 ,  H01L27/1463 ,  H01L27/14685 ,  H01L27/1462

    Abstract: An image sensor is includes a plurality of pixels. Each of the pixels includes a silicon photoconversion region and a material that at least partially surrounds the photoconversion region. The material has a refraction index smaller than the refraction index of silicon, and the interface between the photoconversion region of the pixel and the material is configured so that at least one ray reaching the photoconversion region of the pixel undergoes a total reflection or a plurality of successive total reflections at the interface.

    ELECTRONIC DEVICE COMPRISING A PHOTOSENSITIVE SEMICONDUCTOR REGION AND CORRESPONDING MANUFACTURING METHOD
    3.
    发明申请
    ELECTRONIC DEVICE COMPRISING A PHOTOSENSITIVE SEMICONDUCTOR REGION AND CORRESPONDING MANUFACTURING METHOD 有权

    公开(公告)号：US20220085082A1

    公开(公告)日：2022-03-17

    申请号：US17469702

    申请日：2021-09-08

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Axel CROCHERIE ,  Stephane MONFRAY

    IPC: H01L27/146

    Abstract: A photosensitive semiconductor region is configured to be illuminated through a rear face. A periodic array of pads formed of a first material is provided at the front face. The periodic array has an outline with a periodic pattern parameterized by characteristic dimensions. The outline forms an interface between the first material and a second material, where the first and second materials have different optical indices. The characteristic dimensions of the periodic pattern are less than a wavelength of interest and are configured to produce at the interface a reflection of light at the wavelength of interest towards the photosensitive semiconductor region.

    OPTICAL SENSOR
    5.
    发明申请
    OPTICAL SENSOR 有权

    公开(公告)号：US20230030472A1

    公开(公告)日：2023-02-02

    申请号：US17869172

    申请日：2022-07-20

    Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (Grenoble 2) SAS

    Inventor： Axel CROCHERIE ,  Olivier LE-BRIZ

    IPC: H01L27/146

    Abstract: An optical sensor includes pixels, with each pixel formed by a photodetector and a telecentric system topping the photodetector. Each telecentric system includes: an opaque layer with openings facing the photodetector and a microlens facing each opening and arranged between the opaque layer and the photodetector. Each pixel further includes an optical filter between the microlenses and the photodetector. The optical filter may, for example, be an interference filter, a diffraction grating-based filter or a metasurface-based filter.

    IMAGE SENSOR
    8.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20210126034A1

    公开(公告)日：2021-04-29

    申请号：US17077966

    申请日：2020-10-22

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Axel CROCHERIE

    IPC: H01L27/146

    Abstract: An image sensor is includes a plurality of pixels. Each of the pixels includes a silicon photoconversion region and a material that at least partially surrounds the photoconversion region. The material has a refraction index smaller than the refraction index of silicon, and the interface between the photoconversion region of the pixel and the material is configured so that at least one ray reaching the photoconversion region of the pixel undergoes a total reflection or a plurality of successive total reflections at the interface.

    IMAGE SENSOR WITH IMPROVED QUANTUM EFFICIENCY FOR INFRARED RADIATION
    9.
    发明申请
    IMAGE SENSOR WITH IMPROVED QUANTUM EFFICIENCY FOR INFRARED RADIATION 审中-公开

    公开(公告)号：US20190280032A1

    公开(公告)日：2019-09-12

    申请号：US16414409

    申请日：2019-05-16

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Axel CROCHERIE ,  Pierre Emmanuel Marie MALINGE

    IPC: H01L27/146

    Abstract: An integrated image sensor with backside illumination includes a pixel. The pixel is formed by a photodiode within an active semiconductor region having a first face and a second face. A converging lens, lying in front of the first face of the active region, directs received light rays towards a central zone of the active region. At least one diffracting element, having a refractive index different from a refractive index of the active region, is provided at least partly aligned with the central zone at one of the first and second faces.

    IMAGE SENSOR WITH REDUCED SPECTRAL AND OPTICAL CROSSTALK
    10.
    发明申请
    IMAGE SENSOR WITH REDUCED SPECTRAL AND OPTICAL CROSSTALK 有权
    具有减少光谱和光学CROSSTALK的图像传感器

    公开(公告)号：US20170062507A1

    公开(公告)日：2017-03-02

    申请号：US15050579

    申请日：2016-02-23

    Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

    Inventor： Axel CROCHERIE ,  Michel MARTY ,  Jean-Luc HUGUENIN ,  Sébastien JOUAN

    IPC: H01L27/146

    CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

    Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer above the photodiode, a dielectric region above the antireflection layer and an optical filter to pass incident luminous radiation having a given wavelength. The antireflection layer may include an array of pads mutually separated by a dielectric material of the dielectric region. The array may be configured to allow simultaneous transmission of the incident luminous radiation and a diffraction of the incident luminous radiation producing diffracted radiations which have wavelengths below that of the incident radiation, and are attenuated with respect to the incident radiation.

    Abstract translation: 集成图像传感器可以包括相邻像素，每个像素包括有源半导体区域，包括光电二极管，光电二极管上方的抗反射层，抗反射层上方的电介质区域和滤光器，以使具有给定波长的入射发光。 抗反射层可以包括由电介质区域的电介质材料相互分离的衬垫阵列。 阵列可以被配置为允许入射的发光的同时透射和入射的发光的衍射产生具有低于入射辐射的波长的衍射辐射，并且相对于入射辐射被衰减。

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