公开(公告)号：US11621363B2

公开(公告)日：2023-04-04

申请号：US17076281

申请日：2020-10-21

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Bastien Mamdy

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/18

Abstract: An integrated circuit is formed in a semiconductor substrate. An array of single-photon-avalanche diodes is formed at a front side of the semiconductor substrate. The array includes first and second diodes that are adjacent to each other. A Bragg mirror is positioned between the first and second diodes. The Bragg mirror is configured to prevent a propagation of light between the first and second diodes.

公开(公告)号：US10192917B2

公开(公告)日：2019-01-29

申请号：US15198824

申请日：2016-06-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Bastien Mamdy

IPC: H01L27/146

Abstract: A photosensor is formed within a semiconductor substrate layer having a front side and a back side. An isolation structure delimits an active region of the semiconductor substrate layer which includes a charge collecting region. The front side of semiconductor substrate layer includes a charge transfer circuit. A reflecting mirror is mounted at the back side of the semiconductor substrate layer. The reflecting mirror includes a pupil opening configured to admit light into the active region at the back side. An underside reflective surface of the reflecting mirror is configured to reflect light received from the active region back into the active region.

公开(公告)号：US20180006072A1

公开(公告)日：2018-01-04

申请号：US15198824

申请日：2016-06-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Bastien Mamdy

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

Abstract: A photosensor is formed within a semiconductor substrate layer having a front side and a back side. An isolation structure delimits an active region of the semiconductor substrate layer which includes a charge collecting region. The front side of semiconductor substrate layer includes a charge transfer circuit. A reflecting mirror is mounted at the back side of the semiconductor substrate layer. The reflecting mirror includes a pupil opening configured to admit light into the active region at the back side. An underside reflective surface of the reflecting mirror is configured to reflect light received from the active region back into the active region.

公开(公告)号：US12051705B2

公开(公告)日：2024-07-30

申请号：US17471049

申请日：2021-09-09

Applicant: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED ,  STMicroelectronics (Crolles 2) SAS

Inventor： Raul Andres Bianchi ,  Marios Barlas ,  Alexandre Lopez ,  Bastien Mamdy ,  Bruce Rae ,  Isobel Nicholson

IPC: H01L27/146 ,  G02B5/18

CPC classification number: H01L27/14605 ,  H01L27/1462 ,  G02B5/18 ,  G02B5/1814 ,  G02B5/1819 ,  G02B5/1828 ,  G02B5/1842 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/1464

Abstract: The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.

公开(公告)号：US20210126149A1

公开(公告)日：2021-04-29

申请号：US17076281

申请日：2020-10-21

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Bastien Mamdy

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/18

Abstract: An integrated circuit is formed in a semiconductor substrate. An array of single-photon-avalanche diodes is formed at a front side of the semiconductor substrate. The array includes first and second diodes that are adjacent to each other. A Bragg mirror is positioned between the first and second diodes. The Bragg mirror is configured to prevent a propagation of light between the first and second diodes.