公开(公告)号：US20170194368A1

公开(公告)日：2017-07-06

申请号：US15392032

申请日：2016-12-28

Applicant: STMicroelectronics (Crolles 2) SAS ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Francois Roy ,  Boris Rodrigues ,  Marie Guillon ,  Yvon Cazaux ,  Benoit Giffard

IPC: H01L27/146 ,  H04N5/374

CPC classification number: G01S7/4863 ,  G01S7/4914 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H04N5/374

Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.

公开(公告)号：US10162048B2

公开(公告)日：2018-12-25

申请号：US15392032

申请日：2016-12-28

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Boris Rodrigues ,  Marie Guillon ,  Yvon Cazaux ,  Benoit Giffard

IPC: G01S7/48 ,  H01L27/146 ,  H04N5/374 ,  G01S7/491 ,  G01S7/486

Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.

公开(公告)号：US20190086519A1

公开(公告)日：2019-03-21

申请号：US16194985

申请日：2018-11-19

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Roy ,  Boris Rodrigues Goncalves ,  Marie Guillon ,  Yvon Cazaux ,  Benoit Giffard

IPC: G01S7/486 ,  H01L27/146 ,  G01S7/491 ,  H04N5/374

Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.