公开(公告)号：US20180220090A1

公开(公告)日：2018-08-02

申请号：US15730539

申请日：2017-10-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Didier Herault ,  Pierre Malinge

IPC: H04N5/365 ,  H04N5/374 ,  H04N5/353

CPC classification number: H04N5/365 ,  H04N5/2357 ,  H04N5/3537 ,  H04N5/35572 ,  H04N5/35581 ,  H04N5/3741 ,  H04N5/37452 ,  H04N5/37455 ,  H04N5/37457

Abstract: An image sensor includes a plurality of pixels each including a first photodiode linked to a capacitive readout node by a first transistor, and a second photodiode linked to a first capacitive storage node by a second transistor, the first capacitive node being linked to the readout node by a third transistor, and the readout node being linked to a node for applying a reset potential by a fourth transistor.

公开(公告)号：US10284798B2

公开(公告)日：2019-05-07

申请号：US15730539

申请日：2017-10-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Didier Herault ,  Pierre Malinge

IPC: H04N5/365 ,  H04N5/353 ,  H04N5/374 ,  H04N5/355 ,  H04N5/3745 ,  H04N5/235

Abstract: An image sensor includes a plurality of pixels each including a first photodiode linked to a capacitive readout node by a first transistor, and a second photodiode linked to a first capacitive storage node by a second transistor, the first capacitive node being linked to the readout node by a third transistor, and the readout node being linked to a node for applying a reset potential by a fourth transistor.