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    INDIRECT TIME OF FLIGHT SENSOR AND METHOD
    1.
    发明申请
    INDIRECT TIME OF FLIGHT SENSOR AND METHOD 有权

    公开(公告)号：US20220276356A1

    公开(公告)日：2022-09-01

    申请号：US17652177

    申请日：2022-02-23

    Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics (Crolles 2) SAS

    Inventor： Cedric Tubert ,  Pierre Malinge ,  Matteo Maria Vignetti

    IPC: G01S7/4865 ,  G01S7/4861

    Abstract: The present description concerns a sensor and method. Each pixel of the sensor comprises assemblies each including a memory area and a transfer device coupling the memory area to a photoconversion area, and a device for resetting the memory areas. The sensor includes a first circuit controlling the transfer devices and a second circuit controlling the reset devices. During each integration phase, the second circuit orders the end of a phase of reset of the memory areas of first pixels at the beginning of the integration phase and the end of a phase of reset of the memory areas of second pixels at a time subsequent to the beginning of the integration phase.

    Image sensor using a global shutter and method for controlling same
    6.
    发明授权
    Image sensor using a global shutter and method for controlling same 有权

    公开(公告)号：US11451730B2

    公开(公告)日：2022-09-20

    申请号：US16890877

    申请日：2020-06-02

    Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS ,  STMICROELECTRONICS (CROLLES 2) SAS

    Inventor： Pierre Malinge ,  Frederic Lalanne ,  Laurent Simony

    IPC: H04N5/3745 ,  H04N5/355

    Abstract: An image sensor includes pixels each including: a first transistor and a first switch that are connected in series between a first node configured to receive a first potential and an internal node of the pixel, a gate of the first transistor being coupled with a floating diffusion node of the pixel; a capacitive element, a first terminal of which is connected to the floating diffusion node of the pixel; and several assemblies each including a capacitance connected in series with a second switch coupling the capacitance to the internal node. The sensor also includes a control circuit configured to control, each time a voltage is stored in one of the assemblies of a pixel, an increase of a determined value of a difference in potential between the floating diffusion node and the internal node of the pixel.

    Global shutter imager device
    7.
    发明授权
    Global shutter imager device 有权

    公开(公告)号：US10924700B2

    公开(公告)日：2021-02-16

    申请号：US16599875

    申请日：2019-10-11

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Pierre Malinge

    IPC: H04N5/3745 ,  H04N5/235 ,  G09G5/42

    Abstract: A pixel of an imager device includes a photosensitive area configured to integrate a light signal. A first capacitive storage node is configured to receive a signal representative of the number of charges generated by the photosensitive area. A second capacitive storage node is configured to receive a reference signal. A first transfer transistor is coupled between the first capacitive storage node and the photosensitive area. A second transfer transistor is coupled between the second capacitive storage node and a terminal which supplied the reference signal. The first and second two transfer transistors have a common conduction electrode and a common substrate, wherein the common substrate is coupled to the first capacitive storage node.

    Integrated global shutter image sensor
    8.
    发明授权
    Integrated global shutter image sensor 有权

    公开(公告)号：US11102429B2

    公开(公告)日：2021-08-24

    申请号：US16547369

    申请日：2019-08-21

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Pierre Malinge ,  Frédéric Lalanne

    IPC: H04N5/355 ,  H04N5/3745 ,  H01L27/146

    Abstract: In one embodiment, an integrated image sensor includes an array of pixels in which each pixel includes a photosensitive area configured to integrate a luminous signal by generating electron-hole pairs so as to form a first signal representative of the number of electrons in the generated electron-hole pairs and a second signal representative of the number of holes in the generated electron-hole pairs. A first circuit portion is configured to store the first signal sheltered from light. A second circuit portion is configured to store the second signal sheltered from light. A third circuit portion is configured to read the first signal and the second signal and able to perform combination operations between the first signal and the second signal so as to generate a combined signal representative of an image, where the integrated image sensor is tailored to operate in a global shutter control mode.

    Integrated Global Shutter Image Sensor
    9.
    发明申请
    Integrated Global Shutter Image Sensor 审中-公开

    公开(公告)号：US20200068148A1

    公开(公告)日：2020-02-27

    申请号：US16547369

    申请日：2019-08-21

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Pierre Malinge ,  Frédéric Lalanne

    IPC: H04N5/355 ,  H01L27/146 ,  H04N5/3745

    Abstract: In one embodiment, an integrated image sensor includes an array of pixels in which each pixel includes a photosensitive area configured to integrate a luminous signal by generating electron-hole pairs so as to form a first signal representative of the number of electrons in the generated electron-hole pairs and a second signal representative of the number of holes in the generated electron-hole pairs. A first circuit portion is configured to store the first signal sheltered from light. A second circuit portion is configured to store the second signal sheltered from light. A third circuit portion is configured to read the first signal and the second signal and able to perform combination operations between the first signal and the second signal so as to generate a combined signal representative of an image, where the integrated image sensor is tailored to operate in a global shutter control mode.

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