公开(公告)号：US20130099329A1

公开(公告)日：2013-04-25

申请号：US13659771

申请日：2012-10-24

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Mickael Gros-Jean ,  Clement Gaumer ,  Emmanuel Bayard Perrin

IPC: H01L29/78 ,  H01L21/28

CPC classification number: H01L21/76232 ,  H01L21/28229 ,  H01L21/823481 ,  H01L29/513 ,  H01L29/518

Abstract: A method for defining an insulator in a semiconductor substrate includes forming a trench in the substrate, forming in the trench an insulating material having its upper surface arranged above the surface of the substrate, and forming a diffusion barrier layer in a portion of the insulating material located above the surface of the semiconductor substrate. Such insulators can be used, for example, to insulate and delineate electronic components or portions of components formed in the substrate.

Abstract translation: 一种用于在半导体衬底中限定绝缘体的方法包括在衬底中形成沟槽，在沟槽中形成其上表面布置在衬底表面上方的绝缘材料，并在绝缘材料的一部分中形成扩散阻挡层 位于半导体衬底的表面上方。 这样的绝缘体可以用于例如绝缘并描绘形成在基板中的电子部件或部件。

公开(公告)号：US08878331B2

公开(公告)日：2014-11-04

申请号：US13659771

申请日：2012-10-24

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Mickael Gros-Jean ,  Clement Gaumer ,  Emmanuel Bayard Perrin

IPC: H01L29/02 ,  H01L21/70 ,  H01L21/28 ,  H01L29/51 ,  H01L21/762 ,  H01L21/8234

CPC classification number: H01L21/76232 ,  H01L21/28229 ,  H01L21/823481 ,  H01L29/513 ,  H01L29/518

Abstract: A method for defining an insulator in a semiconductor substrate includes forming a trench in the substrate, forming in the trench an insulating material having its upper surface arranged above the surface of the substrate, and forming a diffusion barrier layer in a portion of the insulating material located above the surface of the semiconductor substrate. Such insulators can be used, for example, to insulate and delineate electronic components or portions of components formed in the substrate.

Abstract translation: 一种用于在半导体衬底中限定绝缘体的方法包括在衬底中形成沟槽，在沟槽中形成其上表面布置在衬底表面上方的绝缘材料，并在绝缘材料的一部分中形成扩散阻挡层 位于半导体衬底的表面上方。 这样的绝缘体可以用于例如绝缘并描绘形成在基板中的电子部件或部件。