公开(公告)号：US20240162328A1

公开(公告)日：2024-05-16

申请号：US18387627

申请日：2023-11-07

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Edoardo BREZZA ,  Nicolas GUITARD ,  Gregory AVENIER

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/10

CPC classification number: H01L29/66234 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004

Abstract: A bipolar transistor is manufactured by: forming a collector region; forming a first layer made of a material of a base region and an insulating second layer; forming a cavity reaching the collector region; forming a portion of the collector region and a portion of the base region in the cavity; forming an insulating fourth layer made of a same material as the insulating second layer in the periphery of the bottom of the cavity, the insulating fourth layer having a same thickness as the insulating second layer; forming an emitter region; and simultaneously removing the insulating second and a portion of the insulating fourth layer not covered by the emitter region.

公开(公告)号：US20220328629A1

公开(公告)日：2022-10-13

申请号：US17851872

申请日：2022-06-28

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Nicolas GUITARD

IPC: H01L29/08 ,  H01L27/02 ,  H01L27/102 ,  H01L29/167 ,  H01L29/66 ,  H01L29/74

Abstract: Thyristor semiconductor device comprising an anode region, a first base region and a second base region having opposite types of conductivity, and a cathode region, all superimposed along a vertical axis.

公开(公告)号：US20240162329A1

公开(公告)日：2024-05-16

申请号：US18387325

申请日：2023-11-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis GAUTHIER ,  Pascal CHEVALIER ,  Edoardo BREZZA ,  Nicolas GUITARD

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/737

CPC classification number: H01L29/66242 ,  H01L29/0817 ,  H01L29/1004 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/737

Abstract: An electronic device includes an insulating first layer covering a second layer made of a doped semiconductor material. A cavity is formed to cross through the first layer and reach the second layer. Insulating spacers are forming against lateral walls of the cavity. A first doped semiconductor region fills the cavity. The first doped semiconductor region has a doping concentration decreasing from the second layer.

公开(公告)号：US20200258981A1

公开(公告)日：2020-08-13

申请号：US16788091

申请日：2020-02-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Nicolas GUITARD

IPC: H01L29/08 ,  H01L29/167 ,  H01L29/66 ,  H01L29/74 ,  H01L27/102 ,  H01L27/02

Abstract: Thyristor semiconductor device comprising an anode region, a first base region and a second base region having opposite types of conductivity, and a cathode region, all superimposed along a vertical axis.