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    Energy harvesting device
    3.
    发明授权
    Energy harvesting device 有权
    能量收集装置

    公开(公告)号：US09276503B2

    公开(公告)日：2016-03-01

    申请号：US13852660

    申请日：2013-03-28

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Stéphane Monfray ,  Thomas Skotnicki ,  Christophe Maitre ,  Onoriu Puscasu

    IPC: H01L41/04 ,  H01L41/22 ,  H02N99/00 ,  H02N2/18 ,  H01L41/31 ,  F03G7/06

    CPC classification number: H02N2/18 ,  F03G7/065 ,  H01L41/31 ,  Y10T29/42

    Abstract: An energy harvester including first and second sheets; and a plurality of walls, each wall being sandwiched between the first and second sheets and surrounding a cavity, wherein each cavity houses at least one curved plate adapted to change from a first shape to a second shape when its temperature reaches a first threshold and to return to the first shape when its temperature falls to a second threshold lower than said first threshold.

    Abstract translation: 包括第一和第二张床的能量收集器; 每个壁都被夹在第一和第二片之间并围绕空腔，其中每个空腔容纳至少一个弯曲板，当其温度达到第一阈值时适合于从第一形状变化到第二形状， 当其温度下降到低于所述第一阈值的第二阈值时，返回到第一形状。

    THERMAL ENERGY HARVESTING OPTIMISATION WITH BISTABLE ELEMENTS AND COLLABORATIVE BEHAVIOR
    5.
    发明申请
    THERMAL ENERGY HARVESTING OPTIMISATION WITH BISTABLE ELEMENTS AND COLLABORATIVE BEHAVIOR 有权
    热能回收优化与双向元素与协同行为

    公开(公告)号：US20150022054A1

    公开(公告)日：2015-01-22

    申请号：US14356717

    申请日：2012-11-08

    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  STMICROELECTRONICS (CROLLES 2) SAS

    Inventor： Stéphane Monfray ,  Guillaume Savelli ,  Thomas Skotnicki ,  Philippe Coronel ,  Frédéric Gaillard

    IPC: H02N2/18

    CPC classification number: H02N2/18 ,  Y10T29/42

    Abstract: System for converting thermal energy into electrical energy (S1) intended to be arranged between a hot source (SC) and a cold source (SF), comprising means for converting thermal energy into mechanical energy (6) and a piezoelectric material, with the means for converting thermal energy into mechanical energy (6) comprising groups (G1, G2) of at least three bimetallic strips (9, 11, 13) linked mechanically together by their longitudinal ends and suspended above a substrate (12), each bimetallic strip (9, 11, 13) comprising two stable states wherein it has in each of the states a curvature, with two directly adjacent bimetallic strips (9, 11, 13) having for a given temperature opposite curvatures, with the switching from one stable state of the bimetallic strips (9, 11, 13) to the other causing the deformation of a piezoelectric material.

    Abstract translation: 用于将热能转换成旨在设置在热源（SC）和冷源（SF）之间的电能（S1）的系统，包括用于将热能转换成机械能（6）和压电材料的装置 用于将热能转换成机械能（6），其包括通过其纵向端部机械地连接并悬挂在基板（12）上方的至少三个双金属条（9,11,13）的组（G1，G2），每个双金属条 9,11,13）包括两个稳定状态，其中每个状态具有曲率，其中两个直接相邻的双金属条（9,11,13）具有相对于曲率的给定温度，从一个稳定状态切换 双金属条（9,11,13）彼此导致压电材料的变形。

    Device for converting thermal energy into electric energy in the presence of a hot source
    7.
    发明授权
    Device for converting thermal energy into electric energy in the presence of a hot source 有权
    在热源存在下将热能转换为电能的装置

    公开(公告)号：US09303630B2

    公开(公告)日：2016-04-05

    申请号：US13874163

    申请日：2013-04-30

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Thomas Skotnicki ,  Onoriu Puscasu ,  Stéphane Monfray

    IPC: H02N10/00 ,  H01H9/28 ,  F03G7/06 ,  H02N1/08

    CPC classification number: F03G7/06 ,  H02N1/08

    Abstract: A device for converting thermal energy into electric energy intended to be used in combination with a hot source including: a capacitor of variable capacitance, including two electrodes separated by an electrically-insulating material, one of these electrodes being deformable and being associated with an element forming a bimetallic strip, said bimetallic strip including at least two layers of materials having different thermal expansion coefficients, said bimetallic strip being free to deform when it is submitted to the heat of said hot source; a second capacitor having a first electrode connected to a first electrode of said capacitor of variable capacitance; a harvesting circuit electrically connected between the second electrode of the capacitor of variable capacitance and the second electrode of the second capacitor, said harvesting circuit being capable of conducting the current flowing between said second electrodes.

    Abstract translation: 一种用于将热能转换成与热源组合使用的电能的装置，包括：可变电容的电容器，包括由电绝缘材料隔开的两个电极，这些电极中的一个可变形并与元件相关联 形成双金属条，所述双金属条包括具有不同热膨胀系数的至少两层材料，当所述双金属条被送到所述热源的热时，所述双金属条可自由变形; 第二电容器，其具有连接到所述可变电容器的电容器的第一电极的第一电极; 电连接在可变电容器的电容器的第二电极和第二电容器的第二电极之间的收集电路，所述收获电路能够传导在所述第二电极之间流动的电流。

    Method for manufacturing a suspended membrane and dual-gate MOS transistor
    8.
    发明授权
    Method for manufacturing a suspended membrane and dual-gate MOS transistor 有权
    制造悬浮膜和双栅极MOS晶体管的方法

    公开(公告)号：US09184295B2

    公开(公告)日：2015-11-10

    申请号：US14077724

    申请日：2013-11-12

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Stéphane Monfray ,  Thomas Skotnicki

    IPC: H01L29/786

    CPC classification number: H01L29/786 ,  H01L29/78648

    Abstract: A method for manufacturing a suspended membrane in a single-crystal semiconductor substrate, including the steps of: forming in the substrate an insulating ring delimiting an active area, removing material from the active area, successively forming in the active area a first and a second layers, the second layer being a single-crystal semiconductor layer, etching a portion of the internal periphery of said ring down to a depth greater than the thickness of the second layer, removing the first layer so that the second layer formed a suspended membrane anchored in the insulating ring.

    Abstract translation: 一种用于制造单晶半导体衬底中的悬浮膜的方法，包括以下步骤：在衬底中形成限定有源区的绝缘环，从有源区去除材料，在有源区中依次形成第一和第二 层，所述第二层是单晶半导体层，将所述环的内周的一部分蚀刻到大于所述第二层的厚度的深度，去除所述第一层，使得所述第二层形成悬浮膜 在绝缘环中。

    METHOD FOR MANUFACTURING A SUSPENDED MEMBRANE AND DUAL-GATE MOS TRANSISTOR
    9.
    发明申请
    METHOD FOR MANUFACTURING A SUSPENDED MEMBRANE AND DUAL-GATE MOS TRANSISTOR 有权
    制造悬浮膜和双栅极MOS晶体管的方法

    公开(公告)号：US20140070317A1

    公开(公告)日：2014-03-13

    申请号：US14077724

    申请日：2013-11-12

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Stéphane Monfray ,  Thomas Skotnicki

    IPC: H01L29/786

    CPC classification number: H01L29/786 ,  H01L29/78648

    Abstract: A method for manufacturing a suspended membrane in a single-crystal semiconductor substrate, including the steps of: forming in the substrate an insulating ring delimiting an active area, removing material from the active area, successively forming in the active area a first and a second layers, the second layer being a single-crystal semiconductor layer, etching a portion of the internal periphery of said ring down to a depth greater than the thickness of the second layer, removing the first layer so that the second layer formed a suspended membrane anchored in the insulating ring.

    Abstract translation: 一种用于制造单晶半导体衬底中的悬浮膜的方法，包括以下步骤：在衬底中形成限定有源区的绝缘环，从有源区去除材料，在有源区中依次形成第一和第二 层，所述第二层是单晶半导体层，将所述环的内周的一部分蚀刻到大于所述第二层的厚度的深度，去除所述第一层，使得所述第二层形成悬浮膜 在绝缘环中。

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