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Patent Agency Ranking
1.发明申请公开(公告)号：US20210018458A1
公开(公告)日：2021-01-21
申请号：US16928551
申请日：2020-07-14
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Matthias VIDAL-DHO , Quentin HUBERT , Pascal FORNARA
Abstract: Moisture that is possibly present in an integrated circuit is detected autonomously by the integrated circuit itself. An interconnect region of the integrated circuit includes a metal level with a first track and a second track which are separated by a dielectric material. A detection circuit applies a potential difference between the first and second tracks. A current circulating in one of the first and second tracks in response to the potential difference is measured and compared to a threshold. If the current exceeds the threshold, this is indicative of the presence of moisture which renders said dielectric material less insulating.
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2.发明申请公开(公告)号：US20190043814A1
公开(公告)日：2019-02-07
申请号：US16051680
申请日：2018-08-01
Applicant: STMicroelectronics (Rousset) SAS
Inventor： Abderrezak MARZAKI , Christian RIVERO , Quentin HUBERT
Abstract: An integrated electronic circuit includes a semiconductor substrate with a semiconductor well that is isolated by a buried semiconductor region located under the semiconductor well. A vertical MOS transistor formed in the semiconductor well includes a source-drain region provided by the buried semiconductor region. Backside thinning of the semiconductor substrate is detected by biasing the vertical MOS transistor into an on condition to supply a current and then comparing that current to a threshold. Current less than a threshold is indicative that the semiconductor substrate has been thinned from the backside.
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3.发明申请公开(公告)号：US20210005613A1
公开(公告)日：2021-01-07
申请号：US17026874
申请日：2020-09-21
Inventor： Abderrezak MARZAKI , Arnaud REGNIER , Stephan NIEL , Quentin HUBERT , Thomas CABOUT
IPC: H01L27/108 , H01L29/66 , H01L49/02 , H01L29/94
Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.
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4.发明申请公开(公告)号：US20210005612A1
公开(公告)日：2021-01-07
申请号：US17026869
申请日：2020-09-21
Inventor： Abderrezak MARZAKI , Arnaud REGNIER , Stephan NIEL , Quentin HUBERT , Thomas CABOUT
IPC: H01L27/108 , H01L29/66 , H01L49/02 , H01L29/94
Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.
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5.发明申请公开(公告)号：US20190067291A1
公开(公告)日：2019-02-28
申请号：US16111480
申请日：2018-08-24
Inventor： Abderrezak MARZAKI , Arnaud REGNIER , Stephan NIEL , Quentin HUBERT , Thomas CABOUT
IPC: H01L27/108 , H01L29/66 , H01L49/02
CPC classification number: H01L27/10841 , H01L27/10864 , H01L27/10867 , H01L27/1087 , H01L27/10876 , H01L28/60 , H01L29/66181 , H01L29/945
Abstract: A capacitive element includes a trench extending vertically into a well from a first side. The trench is filled with a conductive central section clad with an insulating cladding. The capacitive element further includes a first conductive layer covering a first insulating layer that is located on the first side and a second conductive layer covering a second insulating layer that is located on the first conductive layer. The conductive central section and the first conductive layer are electrically connected to form a first electrode of the capacitive element. The second conductive layer and the well are electrically connected to form a second electrode of the capacitive element. The insulating cladding, the first insulating layer and the second insulating layer form a dielectric region of the capacitive element.
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