公开(公告)号：US12289884B2

公开(公告)日：2025-04-29

申请号：US17747540

申请日：2022-05-18

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Romeric Gay ,  Abderrezak Marzaki

IPC: H10B41/40 ,  H10B41/30

Abstract: A bipolar transistor includes a common collector region comprising a buried semiconductor layer and an annular well. A well region is surrounded by the annular well and delimited by the buried semiconductor layer. A first base region and a second base region are formed by the well region and separated from each other by a vertical gate structure. A first emitter region is implanted in the first base region, and a second emitter region is implanted in the second base region. A conductor track electrically couples the first emitter region and the second base region to configure the bipolar transistor as a Darlington-type device. Structures of the bipolar transistor may be fabricated in a co-integration with a non-volatile memory cell.

公开(公告)号：US11830777B2

公开(公告)日：2023-11-28

申请号：US17863137

申请日：2022-07-12

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Romeric Gay ,  Abderrezak Marzaki

IPC: H01L21/82 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732 ,  H01L21/74 ,  H01L21/04 ,  H01L21/48 ,  H01L21/76

CPC classification number: H01L21/8249 ,  H01L21/04 ,  H01L21/4803 ,  H01L21/74 ,  H01L21/76 ,  H01L27/0623 ,  H01L27/0635 ,  H01L29/732

Abstract: A device includes a MOS transistor and a bipolar transistor at a same first portion of a substrate. The first portion includes a first well doped with a first type forming the channel of the MOS transistor and two first regions doped with a second type opposite to the first type that are arranged in the first well which form the source and drain of the MOS transistor. The first portion further includes: a second well doped with the second type that is arranged laterally with respect to the first well to form the base of the bipolar transistor; a second region doped with the first type that is arranged in the second well to form the emitter of the bipolar transistor; and a third region doped with the first type that is arranged under the second well to form the collector of the bipolar transistor.