公开(公告)号：US20160163659A1

公开(公告)日：2016-06-09

申请号：US14844626

申请日：2015-09-03

Applicant: STMicroelectronics (Tours) SAS

Inventor： Erwan Bruno ,  Abdelali Zaid

IPC: H01L23/66 ,  H01L21/84 ,  H01L21/306 ,  H01L27/02 ,  H01L27/12

CPC classification number: H01L23/66 ,  H01L21/30604 ,  H01L21/76264 ,  H01L21/76297 ,  H01L21/84 ,  H01L23/5222 ,  H01L23/5227 ,  H01L23/5228 ,  H01L27/0248 ,  H01L27/0255 ,  H01L27/0688 ,  H01L27/08 ,  H01L27/0814 ,  H01L27/1203 ,  H01L2223/6661 ,  H01L2223/6672 ,  H01L2224/05572 ,  H01L2924/1421

Abstract: A device includes passive radio frequency components formed of portions of metal layers separated by insulating layers and crossed by vias. The insulating layers are positioned on an upper surface of an insulating substrate. Islands of a semiconductor material extend into the insulating substrate from the upper surface. Active integrated circuit components are formed in the islands.

Abstract translation: 一种装置包括由绝缘层隔开并与通孔隔开的部分金属层形成的无源射频分量。 绝缘层位于绝缘基板的上表面上。 半导体材料的岛从上表面延伸到绝缘基板中。 在岛上形成有源集成电路元件。