公开(公告)号：US20250113506A1

公开(公告)日：2025-04-03

申请号：US18376091

申请日：2023-10-03

Applicant: STMicroelectronics International N.V.

Inventor： Simone RASCUNA' ,  Gabriele BELLOCCHI ,  Paolo BADALA' ,  Marilena VIVONA ,  Fabrizio ROCCAFORTE

IPC: H01L29/66 ,  H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872

Abstract: Methods, systems, and apparatuses for one step formation of ohmic contacts and Schottky contacts for SiC power devices by using laser annealing are provided. An SiC power device may include a back-side ohmic contact, a n+ substrate, a n− epitaxial layer, one or more p+ regions, one or more carbon layers, one or more ohmic contacts, and a Schottky contact. The one or more ohmic contacts and Schottky contact may be formed in a one step operation that may include laser annealing. During manufacturing, a metallization layer applied above the carbon layers and n-epitaxial layer may form the ohmic contacts and Schottky contacts when the annealing is performed.