公开(公告)号：US20250113506A1

公开(公告)日：2025-04-03

申请号：US18376091

申请日：2023-10-03

Applicant: STMicroelectronics International N.V.

Inventor： Simone RASCUNA' ,  Gabriele BELLOCCHI ,  Paolo BADALA' ,  Marilena VIVONA ,  Fabrizio ROCCAFORTE

IPC: H01L29/66 ,  H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872

Abstract: Methods, systems, and apparatuses for one step formation of ohmic contacts and Schottky contacts for SiC power devices by using laser annealing are provided. An SiC power device may include a back-side ohmic contact, a n+ substrate, a n− epitaxial layer, one or more p+ regions, one or more carbon layers, one or more ohmic contacts, and a Schottky contact. The one or more ohmic contacts and Schottky contact may be formed in a one step operation that may include laser annealing. During manufacturing, a metallization layer applied above the carbon layers and n-epitaxial layer may form the ohmic contacts and Schottky contacts when the annealing is performed.

公开(公告)号：US20250015145A1

公开(公告)日：2025-01-09

申请号：US18348012

申请日：2023-07-06

Applicant: STMicroelectronics International N.V.

Inventor： Simone RASCUNA' ,  Paolo BADALA' ,  Gabriele BELLOCCHI ,  Valeria PUGLISI

IPC: H01L29/40 ,  H01L29/45 ,  H01L29/66 ,  H01L29/872

Abstract: A method for forming an ohmic contact on a semiconductor component, for example a high-power electrical diode, is provided. An example method includes depositing a first metal layer on a top surface of a semiconductor drift layer having an electrical contact point, the first metal layer highly reflective of a laser light. The method further includes depositing a second metal layer on portions of the first metal layer aligned with the electrical contact point, the second metal layer selected to absorb the laser light. The method further includes exposing the first and the second metal layers to the laser light in a laser annealing process, causing the second metal layer to substantially increase in temperature due to the laser light. The increase in temperature of the second metal layer causing the ohmic contact to form between the electrical contact point and the first metal layer.