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1.发明授权公开(公告)号：US10185338B1
公开(公告)日：2019-01-22
申请号：US15848130
申请日：2017-12-20
Applicant: STMicroelectronics International N.V.
Inventor： Abhirup Lahiri , Nitin Bansal , Shrestha Bansal
Abstract: A digital low drop-out regulator circuit includes transistor switches that are selectively actuated in response to a comparison of an output voltage at an output node to corresponding tap reference voltages. A dynamic reference voltage correction circuit operates to shift voltage levels of the tap reference voltages in response to a difference between the output voltage at the output node and an input reference voltage.
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公开(公告)号：US20170060166A1
公开(公告)日：2017-03-02
申请号：US14841476
申请日：2015-08-31
Applicant: STMicroelectronics International N.V.
Inventor： Hemant Shukla , SaurabhKumar Singh , Nitin Bansal
IPC: G05F3/26
CPC classification number: G05F3/267
Abstract: According to an embodiment, a voltage regulator includes a linear voltage regulator (LVR) and a transient feedback circuit. The LVR a primary feedback loop, an input terminal configured to receive an input voltage, and an output terminal configured to output a regulated voltage. The transient feedback circuit is coupled to the output terminal and the primary feedback loop, and is configured to provide a first current with a first polarity to the primary feedback loop when current flowing through the output terminal is increasing.
Abstract translation: 根据实施例，电压调节器包括线性电压调节器（LVR）和瞬态反馈电路。 LVR是主反馈回路，被配置为接收输入电压的输入端子以及被配置为输出调节电压的输出端子。 瞬态反馈电路耦合到输出端子和主反馈环路，并且被配置为当流过输出端子的电流增加时向主反馈环路提供具有第一极性的第一电流。
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公开(公告)号：US20160231758A1
公开(公告)日：2016-08-11
申请号：US15131913
申请日：2016-04-18
Applicant: STMicroelectronics International N.V.
Inventor： Nitin Bansal , Saurabh Kumar Singh , Hemant Shukla
Abstract: An electronic device includes a power supply, a ground, and an intermediate ground having a voltage less than a voltage of the power supply and greater than a voltage of the ground. The electronic device also includes an error amplifier having an input stage coupled between the power supply and the ground, and an output stage coupled between the power supply and the intermediate ground. A ballast transistor is coupled to receive an output from the error amplifier. A feedback circuit is coupled to an output of the ballast transistor to generate feedback signals, and the error amplifier operates in response to the feedback signals.
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公开(公告)号：US09229462B2
公开(公告)日：2016-01-05
申请号：US14788682
申请日：2015-06-30
Applicant: STMicroelectronics International N.V.
Inventor： Hemant Shukla , Saurabh Kumar Singh , Nitin Bansal
Abstract: An FDSOI integrated circuit die supplies on an output node a regulated output voltage based on a reference voltage. A pass transistor that passes a first current to the output node. A feedback loop regulates the output voltage by generating a second current based on the first current and applying a control signal to the pass transistor based on the second current. A loop current adaptor adapts a ratio of the first and second currents by adjusting a back gate bias voltage applied to a back gate of loop transistor of the feedback loop.
Abstract translation: FDSOI集成电路管芯在输出节点上提供基于参考电压的稳压输出电压。 将第一电流传递到输出节点的传输晶体管。 反馈回路基于第一电流产生第二电流并基于第二电流向控制晶体管施加控制信号来调节输出电压。 环路电流适配器通过调整施加到反馈回路的环形晶体管的背栅的背栅偏置电压来适配第一和第二电流的比率。
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公开(公告)号：US09927828B2
公开(公告)日：2018-03-27
申请号：US14841476
申请日：2015-08-31
Applicant: STMicroelectronics International N.V.
Inventor： Hemant Shukla , SaurabhKumar Singh , Nitin Bansal
IPC: G05F3/26
CPC classification number: G05F3/267
Abstract: According to an embodiment, a voltage regulator includes a linear voltage regulator (LVR) and a transient feedback circuit. The LVR a primary feedback loop, an input terminal configured to receive an input voltage, and an output terminal configured to output a regulated voltage. The transient feedback circuit is coupled to the output terminal and the primary feedback loop, and is configured to provide a first current with a first polarity to the primary feedback loop when current flowing through the output terminal is increasing.
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Patent Agency Ranking
6.发明授权公开(公告)号：US09018046B2
公开(公告)日：2015-04-28
申请号：US13841099
申请日：2013-03-15
Inventor： Joshipura Jwalant , Nitin Bansal , Amit Katyal , Massimiliano Picca
CPC classification number: H05K3/30 , G06F17/5063 , Y10T29/49002 , Y10T29/4913 , Y10T29/49169
Abstract: An area efficient distributed device for integrated voltage regulators comprising at least one filler cell coupled between a pair of PADS on I/O rail of a chip and at least one additional filler cell having small size portion of said device is coupled to said I/O rails for distributing portions of said device on the periphery of said chip. The device is coupled as small size portion on the lower portion of said second filler cell for distributing said device on the periphery of said chip and providing maximal area utilization.
Abstract translation: 一种用于集成电压调节器的区域有效的分布式装置，其包括耦合在芯片的I / O轨上的一对PADS与至少一个具有所述装置的小尺寸部分的附加填充单元之间的填充单元耦合到所述I / O 用于在所述芯片的周围分配所述设备的部分的轨道。 该装置作为小尺寸部分耦合在所述第二填充单元的下部，用于将所述装置分布在所述芯片的外围并提供最大的面积利用率。
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7.发明申请公开(公告)号：US20180100774A1
公开(公告)日：2018-04-12
申请号：US15289360
申请日：2016-10-10
Applicant: STMicroelectronics International N.V.
Inventor： Pratap Narayan Singh , Nitin Bansal
CPC classification number: G01K15/005 , G01K1/14 , G01K7/01 , H01L23/34 , H01L23/345 , H01L29/73
Abstract: A localized substrate heater is configured to apply variable substrate heating to an integrated bipolar transistor. The base-to-emitter voltage (Vbe) of that bipolar transistor a varying substrate temperature settings is sensed, with the sensed Vbe processed to determine temperature coefficients of the bipolar transistor. The bipolar transistor may, for example, be a circuit component of an integrated temperature sensing circuit.
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8.发明授权公开(公告)号：US09342085B2
公开(公告)日：2016-05-17
申请号：US14512564
申请日：2014-10-13
Applicant: STMicroelectronics International N.V.
Inventor： Hemant Shukla , Saurabh Kumar Singh , Nitin Bansal
Abstract: An electronic device includes a power supply, a ground, and an intermediate ground having a voltage less than a voltage of the power supply and greater than a voltage of the ground. The electronic device also includes an error amplifier having an input stage coupled between the power supply and the ground, and an output stage coupled between the power supply and the intermediate ground. A ballast transistor is coupled to receive an output from the error amplifier. A feedback circuit is coupled to an output of the ballast transistor to generate feedback signals, and the error amplifier operates in response to the feedback signals.
Abstract translation: 电子设备包括电源，接地和具有小于电源电压的电压并且大于地的电压的中间接地。 电子设备还包括误差放大器，其具有耦合在电源和地之间的输入级，以及耦合在电源和中间接地之间的输出级。 耦合镇流器晶体管以接收来自误差放大器的输出。 反馈电路耦合到镇流器晶体管的输出以产生反馈信号，误差放大器响应于反馈信号而工作。
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9.发明申请公开(公告)号：US20160103458A1
公开(公告)日：2016-04-14
申请号：US14512564
申请日：2014-10-13
Applicant: STMicroelectronics International N.V.
Inventor： Hemant Shukla , Saurabh Kumar Singh , Nitin Bansal
Abstract: An electronic device includes a power supply, a ground, and an intermediate ground having a voltage less than a voltage of the power supply and greater than a voltage of the ground. The electronic device also includes an error amplifier having an input stage coupled between the power supply and the ground, and an output stage coupled between the power supply and the intermediate ground. A ballast transistor is coupled to receive an output from the error amplifier. A feedback circuit is coupled to an output of the ballast transistor to generate feedback signals, and the error amplifier operates in response to the feedback signals.
Abstract translation: 电子设备包括电源，接地和具有小于电源电压的电压并且大于地的电压的中间接地。 电子设备还包括误差放大器，其具有耦合在电源和地之间的输入级，以及耦合在电源和中间接地之间的输出级。 耦合镇流器晶体管以接收来自误差放大器的输出。 反馈电路耦合到镇流器晶体管的输出以产生反馈信号，误差放大器响应于反馈信号而工作。
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公开(公告)号：US10295416B2
公开(公告)日：2019-05-21
申请号：US15289360
申请日：2016-10-10
Applicant: STMicroelectronics International N.V.
Inventor： Pratap Narayan Singh , Nitin Bansal
Abstract: A localized substrate heater is configured to apply variable substrate heating to an integrated bipolar transistor. The base-to-emitter voltage (Vbe) of that bipolar transistor at varying substrate temperature settings is sensed, with the sensed Vbe processed to determine temperature coefficients of the bipolar transistor. The bipolar transistor may, for example, be a circuit component of an integrated temperature sensing circuit.
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