公开(公告)号：US20020039833A1

公开(公告)日：2002-04-04

申请号：US09921642

申请日：2001-08-03

Applicant: STMicroelectronics S.A.

Inventor： Daniel Bensahel ,  Olivier Kermarrec ,  Yves Campidelli

IPC: C30B001/00 ,  H01L021/20 ,  H01L021/36

CPC classification number: H01L33/06 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/127 ,  H01L33/0054 ,  Y10S438/962 ,  Y10S977/721 ,  Y10S977/891

Abstract: A method of forming, on a single-crystal semiconductor substrate of a first material, quantum dots of a second material, including growing by vapor phase epitaxy the second material on the first material in optimal conditions adapted to ensuring a growth at a maximum controllable rate. In an initial step, a puff of a gas containing the second material is sent on the substrate, in conditions corresponding to a deposition rate much faster than the maximum controllable rate.

Abstract translation: 在第一材料的单晶半导体衬底上形成第二材料的量子点的方法，包括通过气相在第一材料上生长第二材料而生长的最佳条件，以适应最大可控速率的生长 。 在初始步骤中，在对应于比最大可控速率快得多的沉积速率的条件下，在衬底上发送含有第二材料的气体的气泡。