公开(公告)号：US20020019083A1

公开(公告)日：2002-02-14

申请号：US09915753

申请日：2001-07-26

Applicant: STMicroelectronics S.A.

Inventor： Herve Jaouen ,  Vincent Le Goascoz

IPC: H01L021/84 ,  H01L021/00 ,  H01L021/331 ,  H01L021/8222

CPC classification number: H01L21/76264 ,  H01L21/76275 ,  H01L21/76278

Abstract: A method of fabricating, from a first semiconductor substrate having two parallel main surfaces, a system including an islet of a semiconductor material surrounded by an insulative material and resting on another insulative material includes forming a layer of a first insulative material, and forming on the top main surface of the first semiconductor substrate a thin semiconductor layer forming the islet of semiconductor material. The thin semiconductor layer can be selectively etched relative to the first semiconductor substrate. A layer of a second insulative material is formed on exposed surfaces of the islet of semiconductor material and the thin semiconductor layer. The method further includes removing the first semiconductor substrate.

Abstract translation: 从具有两个平行主表面的第一半导体衬底制造包括由绝缘材料包围并放置在另一绝缘材料上的半导体材料的胰岛的系统的方法包括形成第一绝缘材料层，并在 第一半导体衬底的顶部主表面是形成半导体材料的小岛的薄的半导体层。 可以相对于第一半导体衬底选择性地蚀刻薄半导体层。 在半导体材料的胰岛和薄半导体层的暴露表面上形成第二绝缘材料层。 该方法还包括移除第一半导体衬底。