公开(公告)号：US20170221948A1

公开(公告)日：2017-08-03

申请号：US15489265

申请日：2017-04-17

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Michel Marty ,  Jean-Luc Huguenin ,  Sébastien Jouan

IPC: H01L27/146 ,  H01L29/66

CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer disposed above the photodiode, a dielectric region disposed above the antireflection layer, an optical filter disposed above the dielectric region, and a diffraction grating disposed in the antireflection layer. The diffraction grating includes an array of pads.

公开(公告)号：US09985119B2

公开(公告)日：2018-05-29

申请号：US15489265

申请日：2017-04-17

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Michel Marty ,  Jean-Luc Huguenin ,  Sébastien Jouan

IPC: H01L21/00 ,  H01L31/113 ,  H01L29/66 ,  H01L27/146

CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer disposed above the photodiode, a dielectric region disposed above the antireflection layer, an optical filter disposed above the dielectric region, and a diffraction grating disposed in the antireflection layer. The diffraction grating includes an array of pads.

公开(公告)号：US09685472B2

公开(公告)日：2017-06-20

申请号：US15050579

申请日：2016-02-23

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Axel Crocherie ,  Michel Marty ,  Jean-Luc Huguenin ,  Sébastien Jouan

IPC: H01L21/00 ,  H01L31/113 ,  H01L27/146 ,  H01L29/66

CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer above the photodiode, a dielectric region above the antireflection layer and an optical filter to pass incident luminous radiation having a given wavelength. The antireflection layer may include an array of pads mutually separated by a dielectric material of the dielectric region. The array may be configured to allow simultaneous transmission of the incident luminous radiation and a diffraction of the incident luminous radiation producing diffracted radiations which have wavelengths below that of the incident radiation, and are attenuated with respect to the incident radiation.