公开(公告)号：US09985119B2

公开(公告)日：2018-05-29

申请号：US15489265

申请日：2017-04-17

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Michel Marty ,  Jean-Luc Huguenin ,  Sébastien Jouan

IPC: H01L21/00 ,  H01L31/113 ,  H01L29/66 ,  H01L27/146

CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer disposed above the photodiode, a dielectric region disposed above the antireflection layer, an optical filter disposed above the dielectric region, and a diffraction grating disposed in the antireflection layer. The diffraction grating includes an array of pads.

公开(公告)号：US20170221948A1

公开(公告)日：2017-08-03

申请号：US15489265

申请日：2017-04-17

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Michel Marty ,  Jean-Luc Huguenin ,  Sébastien Jouan

IPC: H01L27/146 ,  H01L29/66

CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer disposed above the photodiode, a dielectric region disposed above the antireflection layer, an optical filter disposed above the dielectric region, and a diffraction grating disposed in the antireflection layer. The diffraction grating includes an array of pads.

公开(公告)号：US10903259B2

公开(公告)日：2021-01-26

申请号：US16451918

申请日：2019-06-25

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Denis Rideau ,  Axel Crocherie

IPC: H01L27/146

Abstract: A multispectral image sensor includes a semiconductor layer and a number of pixels formed inside and on top of the semiconductor layer. Each pixel includes an active photosensitive area formed in a portion of the semiconductor layer laterally delimited by peripheral insulating walls. The pixels include a first pixel of a first type and a second pixel of a second type. The portion of semiconductor layer of the first pixel has a first lateral dimension selected to define a lateral cavity resonating at a first wavelength and the portion of semiconductor layer of the second pixel has a second lateral dimension different from the first lateral dimension. The second lateral dimension is selected to define a lateral cavity resonating at a second wavelength different from the first wavelength.

公开(公告)号：US20180083057A1

公开(公告)日：2018-03-22

申请号：US15460992

申请日：2017-03-16

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Pierre Emmanuel Marie Malinge

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14649 ,  H01L27/14685

Abstract: An integrated image sensor with backside illumination includes a pixel. The pixel is formed by a photodiode within an active semiconductor region having a first face and a second face. A converging lens, lying in front of the first face of the active region, directs received light rays towards a central zone of the active region. At least one diffracting element, having a refractive index different from a refractive index of the active region, is provided at least partly aligned with the central zone at one of the first and second faces.

公开(公告)号：US20200013820A1

公开(公告)日：2020-01-09

申请号：US16451918

申请日：2019-06-25

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Denis Rideau ,  Axel Crocherie

IPC: H01L27/146

Abstract: A multispectral image sensor includes a semiconductor layer and a number of pixels formed inside and on top of the semiconductor layer. Each pixel includes an active photosensitive area formed in a portion of the semiconductor layer laterally delimited by peripheral insulating walls. The pixels include a first pixel of a first type and a second pixel of a second type. The portion of semiconductor layer of the first pixel has a first lateral dimension selected to define a lateral cavity resonating at a first wavelength and the portion of semiconductor layer of the second pixel has a second lateral dimension different from the first lateral dimension. The second lateral dimension is selected to define a lateral cavity resonating at a second wavelength different from the first wavelength.

公开(公告)号：US20180102387A1

公开(公告)日：2018-04-12

申请号：US15839292

申请日：2017-12-12

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Axel Crocherie ,  Jean-Pierre Oddou ,  Stéphane Allegret-Maret ,  Hugues Leininger

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14607 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

Abstract: A color image sensor including an array of pixels is formed in a semiconductor layer having a back side that receives an illumination. Insulated conductive walls penetrate into the semiconductor layer from the back side and separate the pixels from one another. For each pixel, a color pixel penetrates into from 5 to 30% of a thickness of the semiconductor layer from the back side and occupies at least 90% of the surface area delimited by the walls. An electrically-conductive layer extends from the lateral wall of the filter all the way to the walls.

公开(公告)号：US10475836B2

公开(公告)日：2019-11-12

申请号：US16414409

申请日：2019-05-16

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Pierre Emmanuel Marie Malinge

IPC: H01L27/146

Abstract: An integrated image sensor with backside illumination includes a pixel. The pixel is formed by a photodiode within an active semiconductor region having a first face and a second face. A converging lens, lying in front of the first face of the active region, directs received light rays towards a central zone of the active region. At least one diffracting element, having a refractive index different from a refractive index of the active region, is provided at least partly aligned with the central zone at one of the first and second faces.

公开(公告)号：US10347677B2

公开(公告)日：2019-07-09

申请号：US15460992

申请日：2017-03-16

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Pierre Emmanuel Marie Malinge

IPC: H01L27/146

Abstract: An integrated image sensor with backside illumination includes a pixel. The pixel is formed by a photodiode within an active semiconductor region having a first face and a second face. A converging lens, lying in front of the first face of the active region, directs received light rays towards a central zone of the active region. At least one diffracting element, having a refractive index different from a refractive index of the active region, is provided at least partly aligned with the central zone at one of the first and second faces.

公开(公告)号：US09685472B2

公开(公告)日：2017-06-20

申请号：US15050579

申请日：2016-02-23

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Axel Crocherie ,  Michel Marty ,  Jean-Luc Huguenin ,  Sébastien Jouan

IPC: H01L21/00 ,  H01L31/113 ,  H01L27/146 ,  H01L29/66

CPC classification number: H01L29/66977 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L2027/11892 ,  H04N2209/045

Abstract: An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer above the photodiode, a dielectric region above the antireflection layer and an optical filter to pass incident luminous radiation having a given wavelength. The antireflection layer may include an array of pads mutually separated by a dielectric material of the dielectric region. The array may be configured to allow simultaneous transmission of the incident luminous radiation and a diffraction of the incident luminous radiation producing diffracted radiations which have wavelengths below that of the incident radiation, and are attenuated with respect to the incident radiation.

公开(公告)号：US20200013812A1

公开(公告)日：2020-01-09

申请号：US16451856

申请日：2019-06-25

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Denis Rideau

IPC: H01L27/146 ,  H04N5/341

Abstract: A multispectral image sensor includes a semiconductor layer and a number of pixels formed inside and on top of the semiconductor layer. The pixels include a first pixel of a first type formed inside and on top of a first portion of the semiconductor layer and a second pixel of a second type formed inside and on top of a second portion of the semiconductor layer. The first pixel has a first thickness that defines a vertical cavity resonating at a first wavelength and the second pixel has a second thickness different from the first thickness. The second thickness defines a vertical cavity resonating at a second wavelength different than the first wavelength.