公开(公告)号：US12261597B2

公开(公告)日：2025-03-25

申请号：US18321568

申请日：2023-05-22

Applicant: STMicroelectronics S.r.l.

Inventor： Alberto Marzo ,  Vincenzo Randazzo ,  Vanni Poletto ,  Giovanni Susinna

IPC: H03K17/687 ,  H03K17/0412 ,  H03K17/06

Abstract: In embodiments, a capacitance is coupled to a source of electrical charge via a drain to source current flow path through a field-effect transistor. The capacitance is pre-charged by making the field-effect transistor selectively conductive in response to the gate-source voltage of the field-effect transistor exceeding a threshold. The difference between the gate-source voltage of the field-effect transistor and the threshold provides an overdrive value of the field-effect transistor. The gate of the field-effect transistor is driven with a variable gate-source voltage having as a target maintaining a constant overdrive value. Electrical charge is controllably transferred from the source to the capacitance via the drain to source current flow path through the field-effect transistor avoiding undesirably high inrush currents.

公开(公告)号：US20230403005A1

公开(公告)日：2023-12-14

申请号：US18321568

申请日：2023-05-22

Applicant: STMicroelectronics S.r.l.

Inventor： Alberto Marzo ,  Vincenzo Randazzo ,  Vanni Poletto ,  Giovanni Susinna

IPC: H03K17/687 ,  H03K17/0412 ,  H03K17/06

CPC classification number: H03K17/687 ,  H03K17/04123 ,  H03K17/063

Abstract: In embodiments, a capacitance is coupled to a source of electrical charge via a drain to source current flow path through a field-effect transistor. The capacitance is pre-charged by making the field-effect transistor selectively conductive in response to the gate-source voltage of the field-effect transistor exceeding a threshold. The difference between the gate-source voltage of the field-effect transistor and the threshold provides an overdrive value of the field-effect transistor. The gate of the field-effect transistor is driven with a variable gate-source voltage having as a target maintaining a constant overdrive value. Electrical charge is controllably transferred from the source to the capacitance via the drain to source current flow path through the field-effect transistor avoiding undesirably high inrush currents.