公开(公告)号：US11764773B2

公开(公告)日：2023-09-19

申请号：US17545719

申请日：2021-12-08

Applicant: STMicroelectronics S.r.l.

Inventor： Enrico Castro ,  Giovanni Susinna ,  Vincenzo Randazzo ,  Mirko Dondini ,  Calogero Andrea Trecarichi

IPC: H03K17/082 ,  H02H9/02

CPC classification number: H03K17/0822 ,  H02H9/02

Abstract: Current absorption management for an electronic fuse coupled between an electrical supply source node and an electrical load node selectively controls a high current electronic switch and a low current electronic switch coupled in parallel between the electrical supply source node and the electrical load node. The high current and low current electronic switches are alternatively actuated: in a first mode where the high current electronic switch is turned on and the low current electronic switch is turned off, and in a second mode where the high current electronic switch is turned off and the low current electronic switch is turned on. Change to the second mode may be made in response to a standby state or a sensing of a lower current in the electrical load. Conversely, change to the first mode may be made in response to a sensing of a higher current in the electrical load.

公开(公告)号：US12261597B2

公开(公告)日：2025-03-25

申请号：US18321568

申请日：2023-05-22

Applicant: STMicroelectronics S.r.l.

Inventor： Alberto Marzo ,  Vincenzo Randazzo ,  Vanni Poletto ,  Giovanni Susinna

IPC: H03K17/687 ,  H03K17/0412 ,  H03K17/06

Abstract: In embodiments, a capacitance is coupled to a source of electrical charge via a drain to source current flow path through a field-effect transistor. The capacitance is pre-charged by making the field-effect transistor selectively conductive in response to the gate-source voltage of the field-effect transistor exceeding a threshold. The difference between the gate-source voltage of the field-effect transistor and the threshold provides an overdrive value of the field-effect transistor. The gate of the field-effect transistor is driven with a variable gate-source voltage having as a target maintaining a constant overdrive value. Electrical charge is controllably transferred from the source to the capacitance via the drain to source current flow path through the field-effect transistor avoiding undesirably high inrush currents.

公开(公告)号：US20230403005A1

公开(公告)日：2023-12-14

申请号：US18321568

申请日：2023-05-22

Applicant: STMicroelectronics S.r.l.

Inventor： Alberto Marzo ,  Vincenzo Randazzo ,  Vanni Poletto ,  Giovanni Susinna

IPC: H03K17/687 ,  H03K17/0412 ,  H03K17/06

CPC classification number: H03K17/687 ,  H03K17/04123 ,  H03K17/063

Abstract: In embodiments, a capacitance is coupled to a source of electrical charge via a drain to source current flow path through a field-effect transistor. The capacitance is pre-charged by making the field-effect transistor selectively conductive in response to the gate-source voltage of the field-effect transistor exceeding a threshold. The difference between the gate-source voltage of the field-effect transistor and the threshold provides an overdrive value of the field-effect transistor. The gate of the field-effect transistor is driven with a variable gate-source voltage having as a target maintaining a constant overdrive value. Electrical charge is controllably transferred from the source to the capacitance via the drain to source current flow path through the field-effect transistor avoiding undesirably high inrush currents.