公开(公告)号：US20240178301A1

公开(公告)日：2024-05-30

申请号：US18530050

申请日：2023-12-05

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ferdinando IUCOLANO ,  Alfonso PATTI ,  Alessandro CHINI

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/205 ,  H01L29/423 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/2003

Abstract: A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.

公开(公告)号：US20210367062A1

公开(公告)日：2021-11-25

申请号：US17396154

申请日：2021-08-06

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando IUCOLANO ,  Alfonso PATTI ,  Alessandro CHINI

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/778 ,  H01L29/205

Abstract: A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.

公开(公告)号：US20220130990A1

公开(公告)日：2022-04-28

申请号：US17571334

申请日：2022-01-07

Applicant: STMicroelectronics S.r.l.

Inventor： Ferdinando IUCOLANO ,  Alfonso PATTI

IPC: H01L29/778 ,  H01L29/423 ,  H01L29/66 ,  H01L29/20 ,  H01L29/10 ,  H01L21/02 ,  H01L29/205 ,  H01L29/417

Abstract: A normally-off electronic device, comprising: a semiconductor body including a heterostructure that extends over a buffer layer; a recessed-gate electrode, extending in a direction orthogonal to the plane; a first working electrode and a second working electrode at respective sides of the gate electrode; and an active area housing, in the on state, a conductive path for a flow of electric current between the first and second working electrodes. A resistive region extends at least in part in the active area that is in the buffer layer and is designed to inhibit the flow of current between the first and second working electrodes when the device is in the off state. The gate electrode extends in the semiconductor body to a depth at least equal to the maximum depth reached by the resistive region.

公开(公告)号：US20200091313A1

公开(公告)日：2020-03-19

申请号：US16690035

申请日：2019-11-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando IUCOLANO ,  Alfonso PATTI ,  Alessandro Chini

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/205 ,  H01L29/423

Abstract: A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.