公开(公告)号：US20220415705A1

公开(公告)日：2022-12-29

申请号：US17848050

申请日：2022-06-23

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Daria DORIA

IPC: H01L21/768 ,  H01L21/283 ,  H01L23/532

Abstract: An integrated electronic device including: a main body delimited by a front surface; a top conductive region extending within the main body, starting from the front surface; a first dielectric region extending on the front surface; and a barrier structure, arranged on the first dielectric region. A first aperture extends through the barrier structure and the first dielectric region; the first aperture is delimited at bottom by the top conductive region. The integrated electronic device further includes a contact structure including at least a first conductive region extending within the first aperture, in direct contact with the top conductive region and the barrier structure.

公开(公告)号：US20240120301A1

公开(公告)日：2024-04-11

申请号：US18544747

申请日：2023-12-19

Applicant: STMicroelectronics S.r.l.

Inventor： Simone Dario MARIANI ,  Elisabetta PIZZI ,  Daria DORIA

IPC: H01L23/00 ,  H01L21/56

CPC classification number: H01L24/05 ,  H01L21/56 ,  H01L24/03 ,  H01L24/13 ,  H01L24/45 ,  H01L2224/02181 ,  H01L2224/0219 ,  H01L2224/03019 ,  H01L2224/0382 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05647

Abstract: A back end of line (BEOL) structure for an integrated circuit chip includes a last metal structure providing a bonding pad. A passivation structure over the bonding pad includes a first opening extending exposing an upper surface of the bonding pad. A conformal nitride layer extends over the passivation structure and is placed in contact with the upper surface of the bonding pad. An insulator material layer covers the conformal nitride layer and includes a second opening that extends through both the insulator material layer and the conformal nitride layer. A foot portion of the conformal nitride layer on the upper surface of the bonding pad is self-aligned with the second opening.

公开(公告)号：US20230032635A1

公开(公告)日：2023-02-02

申请号：US17391192

申请日：2021-08-02

Applicant: STMicroelectronics S.r.l.

Inventor： Simone Dario MARIANI ,  Elisabetta PIZZI ,  Daria DORIA

IPC: H01L23/00 ,  H01L21/56

Abstract: A back end of line (BEOL) structure for an integrated circuit chip includes a last metal structure providing a bonding pad. A passivation structure over the bonding pad includes a first opening extending exposing an upper surface of the bonding pad. A conformal nitride layer extends over the passivation structure and is placed in contact with the upper surface of the bonding pad. An insulator material layer covers the conformal nitride layer and includes a second opening that extends through both the insulator material layer and the conformal nitride layer. A foot portion of the conformal nitride layer on the upper surface of the bonding pad is self-aligned with the second opening.