公开(公告)号：US12113103B2

公开(公告)日：2024-10-08

申请号：US18062524

申请日：2022-12-06

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Antonello Santangelo ,  Giuseppe Longo ,  Lucio Renna

IPC: H01L29/06 ,  H01L21/265 ,  H01L21/266 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0634 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/266 ,  H01L29/1095 ,  H01L29/66734 ,  H01L29/7813

Abstract: A charge-balance power device includes a semiconductor body having a first conductivity type. A trench gate extends in the semiconductor body from a first surface toward a second surface. A body region has a second conductivity type that is opposite the first conductivity type, and the body region faces the first surface of the semiconductor body and extends on a first side and a second side of the trench gate. Source regions having the first conductivity type extend in the body region and face the first surface of the semiconductor body. A drain terminal extends on the second surface of the semiconductor body. The device further comprises a first and a second columnar region having the second conductivity, which extend in the semiconductor body adjacent to the first and second sides of the trench gate, and the first and second columnar regions are spaced apart from the body region and from the drain terminal.

公开(公告)号：US12166141B2

公开(公告)日：2024-12-10

申请号：US17719205

申请日：2022-04-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello Santangelo ,  Massimo Cataldo Mazzillo ,  Salvatore Cascino ,  Giuseppe Longo ,  Antonella Sciuto

IPC: H01L31/0352 ,  H01L21/74 ,  H01L29/06 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/107 ,  H01L31/18 ,  H01L27/144 ,  H01L27/146

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

公开(公告)号：US11538903B2

公开(公告)日：2022-12-27

申请号：US16945220

申请日：2020-07-31

Applicant: STMicroelectronics S.r.l.

Inventor： Antonello Santangelo ,  Giuseppe Longo ,  Lucio Renna

IPC: H01L29/06 ,  H01L21/265 ,  H01L21/266 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

Abstract: A charge-balance power device includes a semiconductor body having a first conductivity type. A trench gate extends in the semiconductor body from a first surface toward a second surface. A body region has a second conductivity type that is opposite the first conductivity type, and the body region faces the first surface of the semiconductor body and extends on a first side and a second side of the trench gate. Source regions having the first conductivity type extend in the body region and face the first surface of the semiconductor body. A drain terminal extends on the second surface of the semiconductor body. The device further comprises a first and a second columnar region having the second conductivity, which extend in the semiconductor body adjacent to the first and second sides of the trench gate, and the first and second columnar regions are spaced apart from the body region and from the drain terminal.

公开(公告)号：US11335823B2

公开(公告)日：2022-05-17

申请号：US16370636

申请日：2019-03-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello Santangelo ,  Massimo Cataldo Mazzillo ,  Salvatore Cascino ,  Giuseppe Longo ,  Antonella Sciuto

IPC: H01L31/0352 ,  H01L31/107 ,  H01L31/0312 ,  H01L27/146 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/028 ,  H01L27/144

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.