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1.发明申请SEMICONDUCTOR DEVICE WITH INTEGRATED MAGNETIC ELEMENT PROVIDED WITH A BARRIER STRUCTURE AGAINST METAL CONTAMINATION, AND MANUFACTURING 有权具有集成磁性元件的半导体器件，具有防止金属污染的障碍物结构和制造公开(公告)号：US20140167193A1
公开(公告)日：2014-06-19
申请号：US14104934
申请日：2013-12-12
Applicant: STMicroelectronics S.r.l.
Inventor： Paolo Iuliano , Francesca Milanesi , Vincenzo Palumbo , Sonia Pirotta
CPC classification number: H01L27/22 , G01R33/0052 , H01L27/0688 , H01L43/04 , H01L43/14
Abstract: A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element.
Abstract translation: 一种半导体器件，包括：具有彼此相对的第一侧和第二侧的半导体本体; 第一屏障元件，其延伸在半导体本体的第一侧上，并且由构造成用作阻挡金属离子的第一材料制成，例如选自钛，钽，钛合金或化合物，钽合金; 磁性元件，其在第一阻挡层上延伸并且由具有磁性的第二材料制成，例如铁磁材料; 第二屏障元件，其在磁性层上延伸并由构成为用作阻挡金属离子的第三材料制成，例如选自钛，钽，钛合金或化合物，钽合金或化合物。 第一和第二屏障元件形成顶部封装结构和用于磁性元件的底部封装结构。
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2.发明授权Semiconductor device with integrated magnetic element provided with a barrier structure against metal contamination, and manufacturing 有权具有集成磁性元件的半导体器件具有抵抗金属污染的阻挡结构，并且制造公开(公告)号：US09105568B2
公开(公告)日：2015-08-11
申请号：US14104934
申请日：2013-12-12
Applicant: STMicroelectronics S.r.l.
Inventor： Paolo Iuliano , Francesca Milanesi , Vincenzo Palumbo , Sonia Pirotta
CPC classification number: H01L27/22 , G01R33/0052 , H01L27/0688 , H01L43/04 , H01L43/14
Abstract: A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element.
Abstract translation: 一种半导体器件，包括：具有彼此相对的第一侧和第二侧的半导体本体; 第一屏障元件，其延伸在半导体本体的第一侧上，并且由构造成用作阻挡金属离子的第一材料制成，例如选自钛，钽，钛合金或化合物，钽合金; 磁性元件，其在第一阻挡层上延伸并且由具有磁性的第二材料制成，例如铁磁材料; 第二屏障元件，其在磁性层上延伸并由构成为用作阻挡金属离子的第三材料制成，例如选自钛，钽，钛合金或化合物，钽合金或化合物。 第一和第二屏障元件形成顶部封装结构和用于磁性元件的底部封装结构。
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