公开(公告)号：US09105568B2

公开(公告)日：2015-08-11

申请号：US14104934

申请日：2013-12-12

Applicant: STMicroelectronics S.r.l.

Inventor： Paolo Iuliano ,  Francesca Milanesi ,  Vincenzo Palumbo ,  Sonia Pirotta

IPC: H01L27/22 ,  H01L43/14 ,  G01R33/00 ,  H01L43/04 ,  H01L27/06

CPC classification number: H01L27/22 ,  G01R33/0052 ,  H01L27/0688 ,  H01L43/04 ,  H01L43/14

Abstract: A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element.

Abstract translation: 一种半导体器件，包括：具有彼此相对的第一侧和第二侧的半导体本体; 第一屏障元件，其延伸在半导体本体的第一侧上，并且由构造成用作阻挡金属离子的第一材料制成，例如选自钛，钽，钛合金或化合物，钽合金; 磁性元件，其在第一阻挡层上延伸并且由具有磁性的第二材料制成，例如铁磁材料; 第二屏障元件，其在磁性层上延伸并由构成为用作阻挡金属离子的第三材料制成，例如选自钛，钽，钛合金或化合物，钽合金或化合物。 第一和第二屏障元件形成顶部封装结构和用于磁性元件的底部封装结构。

公开(公告)号：US11587866B2

公开(公告)日：2023-02-21

申请号：US17000165

申请日：2020-08-21

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Francesco Maria Pipia ,  Ivan Venegoni ,  Annamaria Votta ,  Francesca Milanesi ,  Samuele Sciarrillo ,  Paolo Colpani

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L23/525

Abstract: A method of manufacturing an integrated electronic device including a semiconductor body and a passivation structure including a frontal dielectric layer bounded by a frontal surface. A hole is formed extending into the frontal surface and through the frontal dielectric layer. A conductive region is formed in the hole. A barrier layer is formed in the hole and extends into the hole. A first coating layer covers a top and sides of a redistribution region of the conductive region and a second coating layer covers is formed covering the first coating layer. A capillary opening is formed extending into the first and second coating layers to the barrier layer. A cavity is formed between the redistribution region and the frontal surface and is bounded on one side by the first coating layer and on the other by the barrier structure by passing an aqueous solution through the capillary opening.

公开(公告)号：US10593625B2

公开(公告)日：2020-03-17

申请号：US16048123

申请日：2018-07-27

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Samuele Sciarrillo ,  Ivan Venegoni ,  Paolo Colpani ,  Francesca Milanesi

IPC: H01L23/00 ,  H01L23/532 ,  H01L23/538 ,  H01L21/308 ,  H01L21/768 ,  H01L23/528 ,  H01L23/31 ,  H01L23/29 ,  H01L23/525

Abstract: A semiconductor device includes a passivation layer over a dielectric layer, a via through the passivation layer and the dielectric layer, an interconnection metallization arranged over said at least one via; said passivation layer underlying peripheral portions of said interconnection metallization, and an outer surface coating that coats said interconnection metallization. The coating preferably includes at least one of a nickel or nickel alloy layer and a noble metal layer. The passivation layer is separated from the peripheral portion of the interconnection metallization by a diffusion barrier layer, preferably a titanium or a titanium alloy barrier. The device includes a dielectric layer arranged between the passivation layer and the diffusion barrier layer; and a hollow recess area between the passivation layer and the end portion of the barrier layer and between the passivation layer and the foot of the outer surface coating.

公开(公告)号：US10790226B2

公开(公告)日：2020-09-29

申请号：US16044186

申请日：2018-07-24

Applicant: STMicroelectronics S.r.l.

Inventor： Francesco Maria Pipia ,  Ivan Venegoni ,  Annamaria Votta ,  Francesca Milanesi ,  Samuele Sciarrillo ,  Paolo Colpani

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L23/525

Abstract: An integrated electronic device includes a semiconductor body and a passivation structure including a frontal dielectric layer bounded by a frontal surface. A conductive region forms a via region, extending into a hole through the frontal dielectric layer. An overlaid redistribution region extends over the frontal surface. A barrier structure includes at least a first barrier region extending into the hole and surrounding the via region. The first barrier region extends over the frontal surface. A first coating layer covers the top and the sides of the redistribution region and a second coating layer covers the first coating layer. A cavity extends between the redistribution region and the frontal surface and is bounded on one side by the first coating layer and on the other by the barrier structure.

公开(公告)号：US20190035728A1

公开(公告)日：2019-01-31

申请号：US16044190

申请日：2018-07-24

Applicant: STMicroelectronics S.r.l.

Inventor： Ivan Venegoni ,  Francesca Milanesi ,  Francesco Maria Pipia ,  Samuele Sciarrillo ,  Paolo Colpani

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532

Abstract: An integrated device includes a semiconductor body and a dielectric layer bounded by a surface. A conductive region of a first metal material forms a via region extending into a hole passing through the dielectric layer, and an overlaid redistribution region which extends over the surface. At least one barrier region of a second metal material extends into the hole and surrounds the via region, and the barrier region furthermore extending over the surface. A first coating layer of a third metal material covers the top and the sides of an upper portion of the redistribution region at a distance from the surface. A second coating layer of a fourth metal material extends at a distance from the surface and covers the first coating layer, and covers laterally a lower portion of the redistribution region which is disposed on top of portions of the barrier region extending over the surface.

公开(公告)号：US20190035727A1

公开(公告)日：2019-01-31

申请号：US16044186

申请日：2018-07-24

Applicant: STMicroelectronics S.r.l.

Inventor： Francesco Maria Pipia ,  Ivan Venegoni ,  Annamaria Votta ,  Francesca Milanesi ,  Samuele Sciarrillo ,  Paolo Colpani

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532

Abstract: An integrated electronic device includes a semiconductor body and a passivation structure including a frontal dielectric layer bounded by a frontal surface. A conductive region forms a via region, extending into a hole through the frontal dielectric layer. An overlaid redistribution region extends over the frontal surface. A barrier structure includes at least a first barrier region extending into the hole and surrounding the via region. The first barrier region extends over the frontal surface. A first coating layer covers the top and the sides of the redistribution region and a second coating layer covers the first coating layer. A cavity extends between the redistribution region and the frontal surface and is bounded on one side by the first coating layer and on the other by the barrier structure.

公开(公告)号：US20140167193A1

公开(公告)日：2014-06-19

申请号：US14104934

申请日：2013-12-12

Applicant: STMicroelectronics S.r.l.

Inventor： Paolo Iuliano ,  Francesca Milanesi ,  Vincenzo Palumbo ,  Sonia Pirotta

IPC: H01L27/22 ,  H01L43/14

CPC classification number: H01L27/22 ,  G01R33/0052 ,  H01L27/0688 ,  H01L43/04 ,  H01L43/14

Abstract: A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element.

Abstract translation: 一种半导体器件，包括：具有彼此相对的第一侧和第二侧的半导体本体; 第一屏障元件，其延伸在半导体本体的第一侧上，并且由构造成用作阻挡金属离子的第一材料制成，例如选自钛，钽，钛合金或化合物，钽合金; 磁性元件，其在第一阻挡层上延伸并且由具有磁性的第二材料制成，例如铁磁材料; 第二屏障元件，其在磁性层上延伸并由构成为用作阻挡金属离子的第三材料制成，例如选自钛，钽，钛合金或化合物，钽合金或化合物。 第一和第二屏障元件形成顶部封装结构和用于磁性元件的底部封装结构。