公开(公告)号：US10236066B2

公开(公告)日：2019-03-19

申请号：US15692158

申请日：2017-08-31

Applicant: STMicroelectronics S.r.l.

Inventor： Daniele Mangano ,  Michele Alessandro Carrano ,  Gaetano Di Stefano ,  Roberto Sebastiano Ruggirello

IPC: G11C16/10 ,  G11C8/20 ,  G11C13/00 ,  G06F12/02 ,  G06F12/0868

Abstract: A non-volatile data memory space for a range of user addresses is provided by means of a range of non-volatile flash memory locations for writing data. The range of flash memory locations for writing data is larger (e.g., 4 KB v. 100 B) than the range of user addresses. Data for a same user address may thus be written in different flash memory locations in a range of flash memory locations with data storage endurance correspondingly improved.